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                                                                                                                                     Data Sheet


4V Drive Nch MOSFET
   RSJ550N10

 Structure                                                                         Dimensions (Unit : mm)
Silicon N-channel MOSFET                                                           LPTS
                                                                                                                     10.1                     4.5
                                                                                                                                                     1.3




Features




                                                                                                   9.0
                                                                                                13.1
1) Low on-resistance.                                                                                                1.24




                                                                                                         1.0
2) High Power Package.




                                                                                                   3.0
                                                                                                                 2.54                          0.4




                                                                                                                                                      1.2
                                                                                                                                  0.78
3) 4V drive.                                                                                                         5.08                      2.7
                                                                                                               (1)   (2)    (3)




 Application
Switching



 Packaging specifications                                                          Inner circuit
         Package                              Taping                                                                                     1

  Type   Code                                   TL
         Basic ordering unit (pieces)          1000                                                                                                  2

RSJ550N10                                       

                                                                                                                              (1)            (2)            (3)
                                                                                   (1) Gate
                                                                                   (2) Drain                         1 ESD PROTECTION DIODE
                                                                                   (3) Source                        2 BODY DIODE


 Absolute maximum ratings (Ta = 25C)
           Parameter               Symbol                    Limits        Unit
Drain-source voltage                           VDSS           100           V
Gate-source voltage                            VGSS           20            V
                               Continuous       ID *3         55            A
Drain current
                               Pulsed           IDP   *1     110            A
Source current                 Continuous        IS   *3     55             A
(Body Diode)                   Pulsed           ISP   *1      110          A
Power dissipation                               PD    *2      100          W
Channel temperature                            Tch            150          C
Range of storage temperature                   Tstg        55 to 150       C
*1 PW 10s, Duty cycle1%
*2 TC=25

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