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2.5V Drive Nch MOSFET
RSU002N06
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
UMT3
(SC-70)
Features
1) High speed switing.
2) Small package(UMT3).
3) Low voltage drive(2.5V drive).
Application
Switching
Abbreviated symbol : RK
Packaging specifications Inner circuit
Package Taping (3)
Type Code T106
Basic ordering unit (pieces) 3000
RSU002N06
2
(2)
1
(1) (1) SOURCE
(2) GATE
1 ESD PROTECTION DIODE
2 BODY DIODE (3) DRAIN
Absolute maximum ratings (Ta = 25C)
Parameter Symbol Limits Unit
Drain-source voltage VDSS 60 V
Gate-source voltage VGSS 20 V
Continuous ID 250 mA
Drain current *1
Pulsed IDP 1 A
Source current Continuous IS 150 mA
(Body Diode) Pulsed ISP *1 1 A
Power dissipation PD *2 200 mW
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
Thermal resistance
Parameter Symbol Limits Unit
Channel to ambient Rth (ch-a)* 625 C / W
* Each terminal mounted on a recommended land.
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1/5 2010.04 - Rev.A
2010 ROHM Co., Ltd. All rights reserved.
c
RSU002N06 Data Sheet
Electrical characteristics (Ta = 25C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Gate-source leakage IGSS - - 10 A VGS=20V, VDS=0V
Drain-source breakdown voltage V(BR)DSS 60 - - V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS - - 1 A VDS=60V, VGS=0V
Gate threshold voltage VGS (th) 1.0 - 2.3 V VDS=10V, ID=1mA
- 1.7 2.4 ID=250mA, VGS=10V
Static drain-source on-state * - 2.1 3.0 ID=250mA, VGS=4.5V
RDS (on)
resistance - 2.3 3.2 ID=250mA, VGS=4.0V
- 3.0 12.0 ID=10mA, VGS=2.5V
Forward transfer admittance l Yfs l* 0.25 - - S ID=250mA, VDS=10V
Input capacitance Ciss - 15 - pF VDS=25V
Output capacitance Coss - 4.5 - pF VGS=0V
Reverse transfer capacitance Crss - 2.0 - pF f=1MHz
Turn-on delay time td(on) * - 3.5 - ns ID=100mA, VDD 30V
Rise time tr * - 5 - ns VGS=10V
Turn-off delay time td(off) * - 18 - ns RL 300
Fall time tf * - 28 - ns RG=10
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage VSD * - - 1.2 V Is=250mA, VGS=0V
*Pulsed
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2/5 2010.04 - Rev.A
2010 ROHM Co., Ltd. All rights reserved.
c
RSU002N06 Data Sheet
Electrical characteristic curves
0.5 0.5 1
Ta= 25C Ta= 25C VDS= 10V
VGS= 10V
Pulsed Pulsed Pulsed
DRAIN CURRENT : ID[A]
DRAIN CURRENT : ID[A]
VGS= 4.5V
0.4
DRAIN CURRENT : ID[A]
0.4
VGS= 10V VGS= 4.0V 0.1 Ta=125C
VGS= 4.5V Ta=75C
0.3 0.3
VGS= 4.0V Ta=25C
VGS= 2.8V 0.01 Ta= -25C
0.2 0.2
VGS= 2.8V
0.001
0.1 0.1 VGS= 2.5V
VGS= 2.5V
0 0 0.0001
0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10 0 1 2 3
DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] GATE-SOURCE VOLTAGE : V GS[V]
Fig.1 Typical Output Characteristics( ) Fig.2 Typical Output Characteristics( ) Fig.3 Typical Transfer Characteristics
100 100 100
STATIC DRAIN-SOURCE ON-STATE
STATIC DRAIN-SOURCE ON-STATE
VGS= 10V VGS= 4.5V
STATIC DRAIN-SOURCE ON-STATE
Ta= 25C
VGS= 2.5V
Pulsed Pulsed Ta=125C Pulsed
VGS= 4.0V Ta=125C
RESISTANCE : RDS(on)[]
RESISTANCE : RDS(on)[]
RESISTANCE : RDS(on)[]
Ta=75C Ta=75C
VGS= 4.5V
10 Ta=25C Ta=25C
10 VGS= 10V 10
Ta= -25C Ta= -25C
1 1 1
0.1 0.1 0.1
0.001 0.01 0.1 1 0.001 0.01 0.1 1 0.001 0.01 0.1 1
DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A]
Fig.4 Static Drain-Source On-State Fig.5 Static Drain-Source On-State Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( ) Resistance vs. Drain Current( ) Resistance vs. Drain Current( )
100 100 1
VGS= 4.0V Ta=125C VGS= 2.5V Ta=125C VDS= 10V
STATIC DRAIN-SOURCE ON-STATE
STATIC DRAIN-SOURCE ON-STATE
Pulsed Ta=75C Pulsed Ta=75C Pulsed
ADMITTANCE : |Yfs| [S]
FORWARD TRANSFER
Ta=25C
]
Ta=25C
RESISTANCE : RDS(on)[
RESISTANCE : RDS(on)[]
Ta= -25C 10 Ta= -25C
10
0.1
Ta= -25C
1 Ta=25C
1
Ta=75C
Ta=125C
0.1 0.1 0.01
0.001 0.01 0.1 1 0.001 0.01 0.1 1 0.001 0.01 0.1 1
DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A]
Fig.7 Static Drain-Source On-State Fig.8 Static Drain-Source On-State Fig.9 Forward Transfer Admittance
Resistance vs. Drain Current( ) Resistance vs. Drain Current( ) vs. Drain Current
www.rohm.com
3/5 2010.04 - Rev.A
2010 ROHM Co., Ltd. All rights reserved.
c
RSU002N06 Data Sheet
1 8 1000
STATIC DRAIN-SOURCE ON-STATE
VGS=0V
REVERSE DRAIN CURRENT : Is [A]
Ta=25C Ta=25C
Pulsed td(off)
SWITCHING TIME : t [ns]
Pulsed VDD= 30V
RESISTANCE : RDS(ON)[]
tf
6 VGS=10V
0.1 ID= 0.01A 100 RG=10
Pulsed
4 ID= 0.25A
0.01 Ta=125C tr
10 td(on)
Ta=75C
2
Ta=25C
Ta=-25C
0.001 0 1
0 0.5 1 1.5 0 2.5 5 7.5 10 0.01 0.1 1
SOURCE-DRAIN VOLTAGE : VSD [V] GATE-SOURCE VOLTAGE : VGS[V] DRAIN-CURRENT : ID[A]
Fig.10 Reverse Drain Current Fig.11 Static Drain-Source On-State Fig.12 Switching Characteristics
vs. Sourse-Drain Voltage Resistance vs. Gate Source Voltage
100
Ta=25C
f=1MHz
CAPACITANCE : C [pF]
VGS=0V
Ciss
10
Crss
Coss
1
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : VDS [V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
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4/5 2010.04 - Rev.A
2010 ROHM Co., Ltd. All rights reserved.
c
RSU002N06 Data Sheet
Measurement circuits
Pulse width
VGS ID
VDS 90%
50% 50%
RL VGS 10%
VDS
D.U.T. 10% 10%
RG VDD 90% 90%
td(on) tr td(off) tf
ton toff
Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms
Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
www.rohm.com
5/5 2010.04 - Rev.A
2010 ROHM Co., Ltd. All rights reserved.
c
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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