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                                                                                         2N3904

NPN General Purpose Transistors
                                                                                  TO-92


                                                                              1. EMITTER     1
                                                                              2. BASE            2
                                                                                                     3
                                                                              3. COLLECTOR



ABSOLUTE MAXIMUM RATINGS (Ta=25 C)

                    Rating                                  Symbol               Value                   Unit
 Collector-Emitter Voltage                                   VCEO                 40                      Vdc
 Collector-Base Voltage                                      VCBO                 60                      Vdc
 Emitter-Base VOltage                                        VEBO                 6.0                     Vdc
 Collector Current                                            IC                 200                     mAdc
 Total Device Dissipation TA=25 C                            PD                   625                    W
  Junction Temperature                                       Tj                   150                     C
  Storage, Temperature                                      Tstg              -55 to +150                 C




ELECTRICAL CHARACTERISTICS

                                Characteristics                       Symbol         Min     Max         Unit
 Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)            V(BR)CEO           40       -        Vdc

 Collector-Base Breakdown Voltage (IC= 100 

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