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                                                                                  2N5401

PNP Transistors
                                                                           TO-92


                                                                                        1
                                                                         1. EMITTER         2
                                                                                                3
                                                                         2. BASE
                                                                         3. COLLECTOR


ABSOLUTE MAXIMUM RATINGS (Ta=25 C)

                  Rating                               Symbol             2N5401                    Unit
 Collector-Emitter Voltage                              VCEO               -150                      Vdc
 Collector-Base Voltage                                VCBO                -160                      Vdc
 Emitter-Base VOltage                                  VEBO                 -5.0                     Vdc
 Collector Current                                       IC                 600                     mAdc
 Total Device Dissipation TA=25 C                      PD                 0.625                      W
 Junction Temperature                                  Tj                  150                       C
 Storage, Temperature                                  Tstg          -55 to +150                     C




ELECTRICAL CHARACTERISTICS

                             Characteristics                    Symbol         Min          Max     Unit
 Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0)      V(BR)CEO      -150              -    Vdc

 Collector-Base Breakdown Voltage (IC= -100 

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