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NPN TRANSISTOR
P b Lead(Pb)-Free
3
1
2
FEATURES:
Power dissipation
PCM SOT-523(SC-75)
Collector current
ICM: 0.05 A
Collector-base voltage
V(BR)CBO: 40 V
Operating and storage junction temperature range
TJ, Tstg C
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol MIN TYP MAX UNIT
Collector-base breakdown voltage IC =50 A, I E=0 V(BR)CBO 40 V
Collector-emitter breakdown voltage IC=1mA, IB=0 V(BR)CEO 25 V
Emitter-base breakdown voltage IE=50 A, IC=0 V(BR)EBO 5 V
Collector cut-off current VCB=24V, IE=0 ICBO 0.5 A
Emitter cut-off current VEB=3V, IC=0 IEBO 0.5 A
DC current gain VCE=6V, IC=1mA hFE 56 270
Collector-emitter saturation voltage IC=10mA, I B =1mA VCE(sat) 0.3 V
Transition frequency VCE=6V, I C=1mA, f=100MHZ fT 150 MHz
Collector output capacitance VCB=6V, I E=0, f=1MHz Cob 2.2 pF
CLASSIFICATION OF hFE
Rank N P Q
Range 56-120 82-180 120-270
Marking AN AP AQ
WEITRON 1/1 16-Jul-10
http://www.weitron.com.tw
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