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2sd965


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            WEITRON                                                                        2SD965
NPN Transistor                                                    COLLECTOR
P b Lead(Pb)-Free                                                     2.



                                                          3.                         1. EMITTER
                                                       BASE                          2. COLLECTOR
                                                                                     3. BASE
FEATURES :                                                            1.
                                                                   EMITTER                      TO-92
* Flash unit of camera
* Switching circuit



  MAXIMUM RATINGS (TA=25 unless otherwise noted)
                 Parameter                           Symbol                     Value                      Units
    Collector-Base Voltage                            VCBO                        42                         V
    Collector-Emitter Voltage                         VCEO                       22                          V
    Emitter-Base Voltage                              VEBO                        6                          V
    Collector Current -Continuous                     IC                           5                         A
    Collector Power Dissipation                       PC                         750                        mW
    Junction Temperature                              TJ                         150                        
    Storage Temperature                              Tstg                      -55-150                      



  ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                   Symbol        Test      conditions   MIN       TYP        MAX      UNIT
   Collector-base breakdown voltage       V(BR)CBO    IC=0.1mA, IE=0           42                              V
   Collector-emitter breakdown voltage    V(BR)CEO    IC=1mA, IB=0             22                              V
   Emitter-base breakdown voltage         V(BR)EBO    IE= 10A, IC=0             6                              V
   Collector cut-off current                ICBO      VCB=30V,IE=0                                  0.1        A
   Emitter cut-off current                  IEBO      VEB=6V, IC=0                                  0.1        A
                                           hFE(1)     VCE=2V, IC= 0.15 mA      150
   DC current gain                         hFE(2)     VCE= 2V,IC = 500 mA      340                  2000
                                           hFE(3)     VCE=2V, IC = 2A          150
   Collector-emitter saturation voltage   VCE(sat)    IC=3000mA,IB=100 mA                           0.35       V
                                                      VCE=6V,
   Transition frequency                      fT                                           150                MHz
                                                      IC=50mA,f=30MHz


   CLASSIFICATION OF            hFE(2)
      Rank                       R                           T                             V

      Range                    340-600                  560-950                        900-2000




    WEITRON                                                 1/2                                              01-Sep-09
hpp://www.weitron.com.tw
        2SD965
Ratings and Characteristic Curves




    WEITRON                         2/2   01-Sep-09
hpp://www.weitron.com.tw



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