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NPN Plastic-Encapsulate Transistor SOT-89
1
2
1. BASE 3
2. COLLECTOR
3. EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25% )
C
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 20 Vdc
Collector-Base Voltage VCBO 50 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
IC 5.0 Adc(DC)
Collector Current
I CP 10 Adc (Pulse) (1)
Collector Power Dissipation PC 0.5 W
Junction Temperature, Storage Temperature Tj , Tstg 150, -55 to +150 %
C
Device Marking
2SD2098Q=AHQ, 2SD2098R=AHR
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) V(BR)CEO 20 - Vdc
Collector-Base Breakdown Voltage (IC= 50
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