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W4401DW
Epitaxial Planer Transistor 3 2 1
6 5
4
PNP Silicon
1
2
3
4 5 6
SOT-363(SC-88)
PNP+PNP
Maximum Ratings
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO -50 Vdc
Collector-Base Voltage VCBO -60 Vdc
Emitter-Base Voltage VEBO -6.0 Vdc
Collector Current-Continuous IC -150 mAdc
Thermal Characteristics
Characteristics Symbol Max Unit
(1)
Total Device Dissipation TA=25 C PD 380 mW
Thermal Resistance, Junction to Ambient R JA 328 C/W
Junction and Storage, Temperature TJ,Tstg -55 to +150 C
Device Marking
W4401DW=5K
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics Symbol Min Max Unit
Off C har acter istics
Collector-Emitter Breakdown Voltage(2) (IC=-1.0mAdc.IB=0) V(BR)CEO -50 - Vdc
Collector-Base Breakdown Voltage (IC=-50 uAdc, IE=0) V(BR)CBO -60 - Vdc
Emitter-Base Breakdown Voltage (IE=-50 uAdc, IC=0) V(BR)EBO -6.0 - Vdc
Emitter Cutoff Current (VEB =-6.0 Vdc) IEBO - -0.1 nAdc
Collector Cutoff Current (VCB=-60Vdc) ICBO - -0.1 nAdc
1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint.
2. Pulse Test:Pulse Width<300uS, Duty Cycle<2.0%
= =
WEITRON
http://www.weitron.com.tw
W4401DW
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Typ Max Unit
On Characteristics
DC Current Gain -
hFE 120
- 560 -
(IC= -1 mAdc, VCE= -6.0Vdc)
Collector-Emitter Saturation Voltage
VCE(sat) - - -0.5 Vdc
(IC= -50 mAdc, IB= -5.0mAdc)
Small-signal Characteristics
Current-Gain-Bandwidth Product fT - - MHz
(IE= 2.0 mAdc, VCE= -12 Vdc, f=300MHz) 140
Output Capacitance -
(VCB= -12 Vdc, f=1.0MHz) Cobo 4.0 5.0 Pf
Electrical Characteristics Curve
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