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Dual Epitaxial Planer Transistor
3 2 1
6 5
4
Features: Tr2 Tr1 1
2
3
* Both a 2SA1037AK chip and 2SC2412K chip in a SOT-363
4 5 6 SOT-363(SC-88)
PNP+NPN
Maximum Ratings
Parameter Symbol Value Unit
NPN 50
Collector-Emitter Voltage VCEO Vdc
PNP -50
NPN 60
Collector-Base Voltage VCBO Vdc
PNP -60
NPN 7.0
Emitter-Base VOltage VEBO Vdc
PNP -6.0
NPN
lC 150
Collector Current-Continuous PNP -150 mAdc
Thermal Characteristics
Characteristics Symbol Max Unit
(1)
Total Device Dissipation FR-5 Board,
PD 150 mW
TA=25
Junction Temperature TJ 150
Storage Temperature Tstg -55 to +150
1. FR-5 = 1.0 x 0.75 x 0.062 in
Device Marking
W4601DW = Z1
WEITRON 1/7 05-Sep-2011
http://www.weitron.com.tw
W4601DW
Electrical Characteristics (TA=25 C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit
Off Characteristics
Collector-Emitter Breakdown Voltage
(lC = 1.0mA) NPN V(BR)CEO 50 - - V
(lC = -1.0mA) PNP -50 - -
Collector-Base Breakdown Voltage
(lC = 50
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