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                                                                                 WTN9435
Surface Mount P-Channel                                                           DRAIN CURRENT
Enhancement Mode Power MOSFET                                                       -6.0 AMPERES
P b Lead(Pb)-Free                                         2,4 DRAIN          DRAIN SOURCE VOLTAGE
                                                                                    -30 VOLTAGE



                                                   1
                                                 GATE                                                      4
                                                                                1. GATE
Features:                                                   3
                                                                                2. DRAIN
                                                                                3. SOURCE     1
                                                                                                  2
                                                         SOURCE                 4. DRAIN              3
* Super high dense cell design for low RDS(ON)
  RDS(ON) < 50m @ VGS = -10V
* Simple Drive Requirement                                                              SOT-223
* Lower On-Resistance
* Fast Switching




Maximum Ratings(TA=25                   Unless Otherwise Specified)

                            Rating                                    Symbol          Value               Unit
 Drain-Source Voltage                                                  VDS             -30                 V

 Gate-Source Voltage                                                   VGS            

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