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Surface Mount P-Channel DRAIN CURRENT
Enhancement Mode Power MOSFET -4.0 AMPERES
P b Lead(Pb)-Free 2,4 DRAIN DRAIN SOURCE VOLTAGE
-60 VOLTAGE
1
GATE 4
1. GATE
Features: 3
2. DRAIN
3. SOURCE 1
2
* Super high dense cell design for low RDS(ON) SOURCE 4. DRAIN 3
RDS(ON) < 90m @ VGS = -10V
* Simple Drive Requirement SOT-223
* Lower On-Resistance
* Fast Switching
Maximum Ratings (TA=25
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