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Surface Mount N-Channel DRAIN CURRENT
Enhancement Mode Power MOSFET 3.9 AMPERES
2,4 DRAIN DRAIN SOURCE VOLTAGE
60 VOLTAGE
1 4
GATE
1. GATE
1
2. DRAIN 2
3 SOURCE 3
3. SOURCE
Features: 4. DRAIN
*Super high dense cell design for low RDS(ON) SOT-223
RDS(ON)<80m@VGS=10V
*Simple Drive Requirement
*Low Gate Charge
*SOT-223 Package
Maximum Ratings(TA=25 Unless Otherwise Specified)
Rating Symbol Value Unit
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS
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