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                                                                                   WTC2305
P-Channel Enhancement                                                               DRAIN CURRENT
Mode Power MOSFET                                          3 DRAIN
                                                                                      -4.2 AMPERES

                                                                                 DRAIN SOURCE VOLTAGE
                                                1                                    -30 VOLTAGE

                                              GATE

                                                           2
Features:                                             SOURCE
                                                                                                 3
*Super High Dense Cell Design For Low R DS(ON)
 R DS(ON) <70m @V GS =10V                                                              1
*Rugged and Reliable                                                                         2
*Simple Drive Requirement
*SOT-23 Package
                                                                                      SOT-23
Applications
*Power Management in Notebook Computer
*Portable Equipment
*Battery Powered System




Maximum Ratings(TA=25                       Unless Otherwise Specified)
                                   Rating                            Symbol           Value          Unit
Drain-Source Voltage                                                   VDS             -30
                                                                                                      V
Gate-Source Voltage                                                    VGS             

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