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                                                                                  WTC2305DS

P-Channel Enhancement                                                               DRAIN CURRENT
                                                           3 DRAIN
Mode Power MOSFET                                                                     -3.5 AMPERES

                                                                                 DRAIN SOURCE VOLTAGE
                                               1                                      -8 VOLTAGE

                                              GATE

                                                           2
Features:                                             SOURCE
                                                                                                 3
*Super High Dense Cell Design For Low R DS(ON)
 R DS(ON) <68m @V GS =-4.5V                                                           1
*Rugged and Reliable                                                                         2
*Simple Drive Requirement
*SOT-23 Package
                                                                                      SOT-23
Applications
*Power Management in Notebook Computer
*Portable Equipment
*Battery Powered System




Maximum Ratings(TA=25                       Unless Otherwise Specified)
                                   Rating                            Symbol          Value             Unit
Drain-Source Voltage                                                   VDS             -8
                                                                                                        V
Gate-Source Voltage                                                    VGS            

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