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N-Channel Enhancement 3 DRAIN
DRAIN CURRENT
Mode Power MOSFET 5.8 AMPERES
P b Lead(Pb)-Free 1 DRAIN SOURCE VOLTAGE
30 VOLTAGE
GATE
Features: 2
SOURCE
* Super High Dense Cell Design For Low RDS(on)
RDS(on) < 38m @ VGS = 10V 3
* Rugged and Reliable
* Simple Drive Requirement 1
* SOT-23 Package 2
Applications:
SOT-23
* Power Management in Notebook Computer
* Portable Equipment
* Battery Powered System
Maximum Ratings (TA
Rating Symbol Value Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS
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