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Surface Mount P-Channel Enhancement
DRAIN CURRENT
Mode POWER MOSFET 3 DRAIN -15 AMPERES
P b Lead(Pb)-Free DRAIN SOURCE VOLTAGE
-60 VOLTAGE
1 GATE
Features:
2
*Super High Dense Cell Design For Low R DS(ON) SOURCE
R DS(ON) <90m @V GS =-10V 4
*Simple Drive Requirement
1
2
*Lower On-resistance 1. GATE
3
2.4 DRAIN
*Fast Switching Characteristic 3. SOURCE
*TO-252 Package
D-PAK / (TO-252)
Maximum Ratings(Ta=25 C Unless Otherwise Specified)
Rating Symbol Value Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS
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