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Surface Mount P-Channel Enhancement
Mode POWER MOSFET 3 DRAIN
DRAIN CURRENT
-15 AMPERES
P b Lead(Pb)-Free
DRAIN SOURCE VOLTAGE
-60 VOLTAGE
1 GATE
Features:
*Super High Dense Cell Design For Low R DS(ON) 2
SOURCE 4
R DS(ON) <90m @V GS =-10V
*Simple Drive Requirement 1
2
3
*Lower On-resistance 1. GATE
*Fast Switching Characteristic 2.4 DRAIN
3. SOURCE
*TO-252 Package
D-PAK / (TO-252)
Maximum Ratings(T =25 C Unless Otherwise Specified)
A
Rating Symbol Value Unit
Drain-Source Voltage VDS -60
V
Gate-Source Voltage VGS
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