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Surface Mount Dual N-Channel
Enhancement Mode MOSFET
DRAIN CURRENT
D1
S1
P b Lead(Pb)-Free
1
8
G1
D1
7
2
6.8 AMPERES
D2
S2
6
3
DRAIN SOURCE VOLTAGE
G2
D2
Features:
4
5
30 VOLTAGE
*Super high dense cell design for low RDS(ON)
RDS(ON)<26m @VGS = 10V
RDS(ON)<40m @VGS = 4.5V
*Simple Drive Requirement
*Dual N MOSFET Package
*SO-8 Package 1
SO-8
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating Symbol Value Unite
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS +
- 20 V
Continuous Drain Current (1) (TA =25
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