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Surface Mount N-Channel DRAIN CURRENT
Enhancement Mode MOSFET 18 AMPERES
D
1
S
8
P b Lead(Pb)-Free DRAIN SOURCE VOLTAGE
D
7
2
S
30 VOLTAGE
D
S
6
3
D
G
4
5
Features:
* Simple Drive Requirement.
* Low On-Resistance.
* Fast Switching.
* Super high dense cell design for low RDS(ON) 1
RDS(ON)<5.5m@VGS=10V
RDS(ON)<6.2m@VGS=4.5V SOP-8
RDS(ON)<8.0m@VGS=2.5V
* Rugged and Reliable.
* SOP-8 Package.
Maximum Ratings (TA=25
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