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wts772_wts882


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                                                                                          WTS772
                                                                                          WTS882
PNP/NPN Epitaxial Planar Transistors

                                                                                      TO-92



                                                                               1. EMITTER 1
                                                                               2. COLLECTOR 2
                                                                                              3
                                                                               3. BASE


ABSOLUTE MAXIMUM RATINGS (Ta=25 C)

                  Rating                              Symbol       PNP/WTS772    NPN/WTS882            Unit
 Collector-Emitter Voltage                             VCEO           -30            30                Vdc
 Collector-Base Voltage                                VCBO           -40            40                Vdc
 Emitter-Base VOltage                                  VEBO           -5.0           5.0               Vdc
 Collector Current (DC)                               IC(DC)          -3.0           3.0               Adc
                             (1)
 Collector Current (Pulse)                            IC (Pulse)      -7.0                 7.0         Adc
 Base Current                                         IB(Pulse)       -0.6                 0.6         Adc
 Total Device Dissipation TA=25 C                     PD                      0.625                    W
 Junction Temperature                                 Tj                        150                     C
 Storage, Temperature                                 Tstg                   -55 to +150               C



Device Marking
 WTS772=B772 ,         WTS882=D882



ELECTRICAL CHARACTERISTICS

                              Characteristics                        Symbol       Min            Max   Unit
 Collector-Emitter Breakdown Voltage (IC= -10/10 mAdc, IB=0)        V(BR)CEO -30/30              -     Vdc

 Collector-Base Breakdown Voltage (IC= -100/100 



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