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Surface Mount P-Channel
Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT
-550m AMPERES
DRAIN SOURCE VOLTAGE
1 -20 VOLTAGE
GATE
Features: 2
*Super High Dense Cell Design For Low RDS(ON) SOURCE
R DS(ON) <600m@V GS =-10V 3
*Simple Gate Drive
*Small package Outline 1
2
*Fast Switching Speed
*SOT-323 Package
SOT-323
Description
*Designer with best combination of fast switching
*Low on-resistance
*Cost-effectiveness
Maximum Ratings(T =25 C Unless Otherwise Specified)
A
Rating Symbol Value Unit
Drain-Source Voltage VDS -20
V
Gate-Source Voltage VGS
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