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                                                                                                  WTX1012
N-Channel ENHANCEMENT MODE
POWER MOSFET                                                                                                              3

P b Lead(Pb)-Free
                                                                                                             1
                                                                                                                   2
FEATURES:
 * Power Mosfet : 1.8V Rated                                                                                  SC-89
 * Gate-Source ESD Protected: 2000 V
 * High-Side Switching                                                                                            Drain
 * Low On-Resistance: 0.7
 * Low Threshold: 0.8 V (typ)                                                                                      3
 * Fast Switching Speed: 10 ns

BENEFITS:
 * Ease in Driving Switches

 * Low-Voltage Operation
                                                                                                       1      (Top View)        2
 * High-Speed Circuits
 * Low Battery Voltage Operation                                                                      Gate                    Source

APPLICATIONS:
 * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories
 * Battery Operated Systems
 * Power Supply Converter Circuits
 * Load/Power Switching Cell Phones, Pagers
 ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED)
                                   Parameter                            Symbol      5 secs         Steady State                     Unit
  Drain-Source Voltage                                                       VDS                20
                                                                                                                                     V
  Gate-Source Voltage                                                        VGS                  6

                                                           TA = 25 C                 600                   500
  Continuous Drain Current (TJ = 150 C)b                                     ID
                                                           TA = 85 C                 400                   350
                                                                                                                                    mA
  Pulsed Drain Currenta                                                      IDM               1000

  Continuous Source Current (diode conduction)b                              IS      275                   250

                                                           TA = 25 C                 175                   150
  Maximum Power Dissipationb for SC 75
                                 SC-75
                                                           TA = 85 C                  90                     80
                                                                             PD                                                     mW
                                                           TA = 25 C                 275                   250
  Maximum Power   Dissipationb   for SC 89
                                     SC-89
                                                           TA = 85 C                 160                   140

  Operating Junction and Storage Temperature Range                       TJ, Tstg            -55 to 150                               C
  Gate-Source ESD Rating (HBM, Method 3015)                                  ESD               2000                                  V

 Notes
 d. Pulse width limited by maximum junction temperature.
 e. Surface Mounted on FR4 Board.

 Device Marking
     WTX1012 = A


      WEITRON                                                          1/6                                                     31-Mar-09
http://www.weitron.com.tw
        WTX1012
Electrical Characteristics (TA=25

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