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BCX54/BCX55/BCX56
NPN Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
1. BASE 1
2. COLLECTOR 2
FEATURES 3. EMITTER 3
High current
SOT-89
Low voltage
Medium power general purposes
Driver stages of audio amplifiers.
MAKING: BCX54:BA BCX54-10:BC BCX54-16:BD
BCX55:BE BCX55-10:BG BCX52-16:BM
BCX56:BH BCX56-10:BK BCX56-16:BL
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage BCX54 45
BCX55 60 V
BCX56 100
VCEO Collector-Emitter Voltage BCX54 45
BCX55 60 V
BCX56 80
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1 A
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -65-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
IC=100A,IE=0 BCX54 45
Collector-base breakdown voltage V(BR)CBO BCX55 60 V
BC56 100
IC=1mA,IB=0 BCX54 45
Collector-emitter breakdown voltage V(BR)CEO BCX55 60 V
BCX56 80
Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 5 V
Collector cut-off current ICBO VCB=30V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A
hFE(1) VCE=2V,IC=5mA 40
DC current gain hFE(2) VCE=2V,IC=150mA 63 250
hFE(3) VCE=2V,IC=500mA 25
Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA 0.5 V
Base-emitter voltage VBE VCE=2V,IC=500mA 1 V
Transition frequency fT VCE=5V,IC=10mA,f=100MHz 130 MHz
W E IT R O N 1/2 25-Jun-08
h t t p : / / w w w . w e i t r o n . c o m . tw
BCX54/BCX55/BCX56
CLASSIFICATION OF hFE(2)
BCX54 BCX54-10; BCX54-16;
Rank BCX55 BCX55-10; BCX55-16;
BCX56 BCX56-10 BCX56-16
Range 63-250 63-160 100-250
Typical Characteristics
WEITRON
2/2 25-Jun-08
http://www.weitron.com.tw
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