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bc5347b


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                                                                                             BC5347B
General Purpose Transistor
NPN Silicon                                                           COLLECTOR
                                                                          3
                                                                                                         3

                                                                 1                              1
                                                               BASE
*Moisture Sensitivity Level: 1                                                                      2

*ESD Rating - Human Body Model:>4000V                                     2                     SOT-23
                                                                       EMITTER
           -Machine Model:>400V




M aximum R atings ( TA=25 C unless otherwise noted)
                    Rating                           Symbol                        Value                         Unit
 Collector-Emitter Voltage                            VCEO                          45                           Vdc

 Collector-Base Voltage                               VCBO                              50                       Vdc

 Emitter-Base VOltage                                 VEBO                          6.0                          Vdc

 Collector Current-Continuous                           IC                          100                      mAdc




Thermal Characteristics
                  Characteristics                    Symbol                      Max                    Unit
 Total Device Dissipation FR-5 Board                   PD
  (Note 1.)TA=25 C                                                                225                    mW
   Derate above 25 C                                                              1.8                   mW/ C
 Thermal Resistance, Junction to Ambient (Note 1.)    R JA                        556                    C/W
 Total Device Dissipation Alumina
  Substrate, (Note 2.) TA=25 C                         PD                         300                    mW
  Derate above 25 C                                                               2.4                   mW/ C
 Thermal Resistance, Junction to Ambient(Note 2.)     R JA                        417                    C/W
 Junction and Storage, Temperature Range             TJ,Tstg               -55 to +150                       C




Device Marking
 BC5347B=1F


1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina




      WE ITR O N
http://www.weitron.com.tw
       BC5347B                                                                                   WE IT R ON
Electrical Characteristics               (TA=25 C Unless Otherwise noted)
                                  Characteristics                      Symbol      Min      Typ    Max      Unit



Off Characteristics
 Collector-Emitter Breakdown Voltage                                               45
                                                                      V(BR)CEO               -      -       V
 (IC= 10mA)
 Collector-Emitter Breakdown Voltage
                                                                      V(BR)CES     50        -      -       V
 (IC=10 



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