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BC847AT/BT/CT
COLLECTOR
General Purpose Transistor 3
3
3
NPN Silicon 1
1
2
BASE
SC-89
2
(SOT-523F)
EMITTER
M aximum R atings ( TA=25 C unless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 45 Vdc
Collector-Base Voltage VCBO 50 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current-Continuous IC 100 mAdc
Thermal Characteristics
Characteristics Symbol Max Unit
Total Device Dissipation FR-5 Board PD
(1)TA=25 C 150 mW
Derate above 25 C 2.4 mW/ C
Thermal Resistance, Junction to Ambient (1) R JA 833 C/W
Junction and Storage, Temperature Range TJ,Tstg -55 to +150 C
Device Marking
BC847A=1E; BC847B=1F;BC847C=1G
1.FR-5=1.0 x 0.75 x 0.062 in.
WE ITR O N
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BC847AT/BT/CT WE IT R ON
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics Symbol Min Typ Max Unit
Off Characteristics
Collector-Emitter Breakdown Voltage V(BR)CEO 45 - -
V
(IC= 10mA)
Collector-Emitter Breakdown Voltage V(BR)CES 50 - - V
(IC=10 uA ,VEB=0)
Collector-Base Breakdown Voltage V
V(BR)CBO 50 - -
(IC=10 uA)
Emitter-Base Breakdown Voltage V(BR)EBO - - V
6.0
(IE=1.0 uA)
Collector Cutoff Current (VCB=30V) - 15 nA
ICBO -
(VCB=30V, TA=150 C) 5.0 mA
On Characteristics
DC Current Gain BC847A hFE - 90 - -
(IC= 10uA, VCE=5.0V) BC847B - -
150
BC847C - 270 -
(IC= 2.0mA, VCE=5.0V) BC847A 110 180 220
BC847B 200 290 450
420 800
BC847C 520
Collector-Emitter Saturation Voltage
(IC= 10mA, IB=0.5mA) VCE(sat) - - 0.25 V
(IC= 100mA, IB=5.0mA) - - 0.6
Base-Emitter Saturation Voltage
(IC= 10mA, IB=0.5mA) VBE(sat) - 0.7 - V
(IC= 100mA, IB=5.0mA) - 0.9 -
Base-Emitter On Voltage
(IC= 2.0mA, VCE=5.0V) VBE(on) 580 660 700 V
(IC= 10mA, VCE=5.0V) - - 770
Small-signal Characteristics
Current-Gain-Bandwidth Product fT - -
(IC= 10mA, VCE= 5.0Vdc, f=100MHz) 100 MHz
Output Capacitance pF
(VCB= 10V, f=1.0MHz) Cobo - - 4.5
Noise Figure dB
(IC= 0.2mA, VCE= 5.0Vdc, NF
Rs=2.0 k , - - 10
f=1.0 kHz, BW=200Hz) - -
WEITRON
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BC847AT/BT/CT WE IT R ON
2.0 1.0
hFE,NORMALIZED DC CURRENT GAIN
VCE=10V 0.9 TA=25 C
1.5
TA=25 C
0.8
V, VOLTAGE (VOLTS)
VBE(sat)@IC/BC=10
1.0 0.7
0.8 0.6 VBE(ON)@VCE= 10V
0.5
0.6
0.4
0.4 0.3
0.2
0.3 VCE(sat)@IC/BC=10
0.1
0.2 0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)
FIG.1 Normalized DC Current Gain FIG.2 "Saturation" And "On" Voltage
qVB, TEMPERATURE COEFFICIENT (mV/ C)
VCE, COLLECTOR- EMITTER VOLTAGE (V)
2.0 1.0
TA=25 C
-55 C to +125 C
1.2
1.6
IC= 200mA 1.6
1.2
2.0
0.8 IC= IC=-50mA IC= 100mA
10mA 2.4
0.4 IC= 20mA 2.8
0 0.2 1.0 10 100
0.02 0.1 1.0 10 20
IC, COLLECTOR CURRENT (mA)
IB, BASE CURRENT (mA)
FIG.3 Collector Saturation Region FIG.4 Base-Emitter Temperature Coefficient
fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz)
10 400
300
7.0 TA=25 C
C,CAPACITANCE (pF)
200
5.0 Cib VCE=10V
TA= 25 C
100
3.0
80
60
2.0 Cob
40
30
1.0 20
0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)
FIG.5 Capacitances FIG.6 Current-Gain- Bandwidth Product
WEITRON
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BC847AT/BT/CT WE IT R ON
SC-89 Outline Demensions Unit:mm
A
SC-89
Dim Min Nom Max
3 A 1.50 1.60 1.70
T OP V IE W B S
B 0.75 0.85 0.95
1 2
C 0.60 0.70 0.80
K D 0.23 0.28 0.33
G
G 0.50BSC
D J 0.10 0.15 0.20
K 0.30 0.40 0.50
M N M --- --- 10
N --- --- 10
J S 1.50 1.60 1.70
C
WEITRON
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