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                                                                                         IRF640
N-Channel Enhancement                                                                DRAIN CURRENT
Mode POWER MOSFET                                           3 DRAIN
                                                                                             18 AMPERES

 P b Lead(Pb)-Free                                                            DRAIN SOURCE VOLTAGE
                                                                                   200 VOLTAGE

                                          1 GATE

Features:
*Super High Dense Cell Design For Low R DS(ON)              2
                                                         SOURCE
    R DS(ON) <0.18@V GS =10V
*   Single Pulse Avalanche Energy Rated                                          1
                                                                                     2
                                                                                         3
*   SOA is Power Dissipation Limited                                          1. GATE
*   Nanosecond Switching Speed                                                2. DRAIN
                                                                              3. SOURCE
*   Linear Transfer Characteristics
                                                                                             TO-220AB
*   High Input Impedance




Maximum Ratings(Ta=25 C Unless Otherwise Specified)
                               Rating                                 Symbol                 Value        Unit

Drain-Source Voltage                                                   VDS                    200
                                                                                                           V
Gate-Source Voltage                                                    VGS                    

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