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KTC3875
Plastic-Encapsulate Transistors COLLECTOR
3
NPN Silicon
1
BASE
2
SOT-23
EMITTER
MAXIMUM RATINGS (Ta=25 C)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 50 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current -Continuous IC 150 mAdc
THERMAL CHARACTERISTICS
Characteristics Symbol Value Unit
Total Device Dissipation FR-5 Board (1) PD 150 mW
TA =25 C
Derate above 25 C 1.2 mW/ C
Thermal Resistance, Junction Ambient R JA 833 C/W
Junction and Storage, Temperature TJ, Tstg -55 to +150 C
Device Marking
KTC3875=AL
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= -1 mAdc, IB=0) V(BR)CEO 50 - Vdc
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) V(BR)CBO 60 - Vdc
Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) V(BR)EBO 5.0 - Vdc
Collector Cutoff Current (VCB= 60Vdc , IE=0) ICBO - 0.1 uAdc
Emitter Cutoff Current (VEB= 5.0 Vdc , I C=0) IEBO - 0.1 uAdc
1. FR-5=1.0 I I 0.75 I I 0.062 in
WEITRON
http://www.weitron.com.tw
KTC3875
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min TYP Max Unit
ON CHARACTERISTICS
DC Current Gain - -
hFE 70 700
(IC= 2 mAdc, VCE= 6.0 Vdc)
Collector-Emitter Saturation Voltage
VCE(sat) - 0.1 0.25 Vdc
(IC= 100 mAdc, IB= 10 mAdc)
Collector Output Capacitance
Cob - 2.0 3.5 Vdc
(VCB= 10 V, IE= 0, f=1MHz)
Transition Frequency
(IC= 1 mAdc, VCE= 10 Vdc) fT 80 - - MHz
Noise Figure
(VCE= 6 V, IC= 0.1mA, Rg=10k , f=1kHz) NF 1.0 10 dB
Classification of hFE
Rank O Y G BL
Range 70-140 120-240 200-400 350-700
Marking ALO ALY ALG ALL
WEITRON
http://www.weitron.com.tw
KTC3875
WEITRON
http://www.weitron.com.tw
KTC3875
WEITRON
http://www.weitron.com.tw
KTC3875
SOT-23 Package Outline Dimensions Unit:mm
A Dim Min Max
A 0.35 0.51
B 1.19 1.40
T OP V IE W B C C 2.10 3.00
D 0.85 1.05
E 0.46 1.00
D
G 1.70 2.10
G
E H 2.70 3.10
H J 0.01 0.13
K 0.89 1.10
K L 0.30 0.61
M 0.076 0.25
L
J M
WEITRON
http://www.weitron.com.tw
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