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                                                                                KTD1898
Epitaxial Planar NPN Transistors                                                 SOT-89

                                                                                                1
                                                                                                    2
                                                                                 1. BASE                3
                                                                                 2. COLLECTOR
                                                                                 3. EMITTER



ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
                   Rating                        Symbol                  Limits                                   Unit
  Collector-Base Voltage                         VCBO                     100                                     Vdc

  Collector-Emitter Voltage                      VCEO                      80                                     Vdc

  Emitter-Base Voltage                           VEBO                       5                                     Vdc

                                                   IC                       1                                     A(DC)
  Collector Current
                                                   I CP                     2                                   A (Pulse)*

   Collector Power Dissipation                     PC                      0.5                                     W

   Junction Temperature, Storage Temperature     Tj , Tstg            150, -55 to +150                             C

* Single pulse Pw = 20ms




                                 C
ELECTRICAL CHARACTERISTICS (Ta=25% unless otherwise noted )
           Parameter                               Symbol                  Min         Typ              Max            Unit

  Collector-Base Breakdown Voltage(Ic=100uA)                 BV CBO        100           -                  -           V

   Collector-Emitter Breakdown Voltage(Ic=1mA)               BV CEO         80           -                  -           V

  Emitter-Base Breakdown Voltage(I E =100uA)                 BVEBO          5            -                  -           V

  Collector Cutoff Current(VCB=80V)                          ICBO           -            -                  1          uA

  Emitter Cutoff Current(VEB =4V)                            IEBO           -            -                  1           uA




      WEITRON
http://www.weitron.com.tw
                                           KTD1898
ELECTRICAL CHARACTERISTICS (Ta=25% unless otherwise noted ) (Countinued)
                                 C
          Parameter                                         Symbol   Min Typ Max Unit

 DC Current Gain (VCE =3V, Ic=500mA)                                                                                                                                  h FE       70       -        400     -

 Collector-Emitter Saturation Voltage (Ic=500mA, IB =20mA)                                                                                                        V CE(sat)       -       -         0.4   V

 Transition Frequency (VCE=10V, Ic=50mA, f=100MHz)                                                                                                                     fT         -     100         -     MHz

 Output Capacitance (VCB=10V, I E=0A, f=1MHz)                                                                                                                         Cob         -      20         -     pF


CLASSIFICATION OF hFE

                Marking                                                            ZO                                                                    ZY                                   ZG

                                 Rank                                               O                                                                    Y                                    GR

                            Range                                               70-140                                                          120-240                                 200-400


ELECTRICAL CHARACTERISTIC CURVES


                                           1000                                             T a=25

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