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                                                                             MBT2222ADW
Dual General Purpose Transistors                            3          2    1
                                                                                                   6 5
                                                                                                         4
NPN+NPN Silicon
                                                                                       1
                                                                                           2
                                                                                               3

                                                            4      5         6      SOT-363(SC-88)
                                                                NPN+NPN


                                                                            Value
                                              VCEO




                            (1)
                                                                           150

                                                                           833
                                              TJ ,Tstg             -55 to+150



 MBT2222ADW=XX




                                                                                                         u




1. Device mounted on FR4 glass epoxy printed circuit board using
   the minimum recommended footprint



      WEITRON
http://www.weitron.com.tw
   MBT2222ADW

ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
                              Characteristics       Symbol      Min        Max     Unit

ON CHARACTERISTICS
 DC Current Gain                                                            -
  (IC=0.1 mAdc, VCE=10 Vdc)                                      35
                                                                 50         -
  (IC=1.0 mAdc, VCE=10 Vdc)
                                                      hFE        75         -        -
  (IC=10 mAdc, VCE=10 Vdc, TA =-55 C)
                                                                 100       300
  (IC=150mAdc, VCE=10 Vdc) (2)
  (I C =150mAdc, VCE=1.0Vdc) (2)                                 50         -
  (IC=500 mAdc, VCE=10 Vdc) (2)                                  40         -
                                          (2)
 Collector-Emitter Saturation Voltage                                              Vdc
  (IC=150 mAdc, IB=15mAdc)                          VCE(sat)          -    0.3
  (IC=500 mAdc, IB=50mAdc)                                            -    1.0
 Base-Emitter Saturation    Voltage (2)                                            Vdc
  (IC=150 mAdc, IB=15mAdc)                          VBE(sat)     0.6       1.2
  (IC=500 mAdc, IB=50mAdc)                                        -        2.0


SMALL-SIGNAL CHARACTERISTICS
 Current-Gain-Bandwidth Product (3)                    fT        300        -     MHz
  (IC=20 mAdc, VCE=20 Vdc, f=100MHz)
 Output Capacitance                                  Cobo         -        8.0     pF
  (VCB=10 Vdc, IE=0, f=1.0MHz)
 Input Capacitance                                   Cibo         -         25     pF
   (VEB=0.5 Vdc, IC=0, f=1.0MHz)
 Input Impedance
                                                                 2.0        0.8
  (IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz)
                                                      hie                          k
  (IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz)                           0.25       1.25

 Voltage Feeback Radio
  (IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz)                hre         -        8.0
                                                                                  x 10-4
  (IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz)                                      4.0

 S mall-S ignal C urrent G ain
  (IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz)                           50        300       -
                                                      hfe
  (I C =10 mAdc, V C E =10V dc, f=1.0 kHz)                       75        375

 Output Admittance
  (IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz)                hoe        5.0       35     

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