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                                                                    MBT3946DW
Dual General Purpose Transistor                      3         2     1
                                                                                           6 5
                                                                                                 4
NPN+PNP Silicon
                                                                               1
                                                                                   2
                                                                                       3

                                                     4     5         6      SOT-363(SC-88)
                                                         NPN+PNP
Maximum Ratings
                    Rating                 Symbol                   Value                        Unit
 Collector-Emitter Voltage                  VCEO                                                 Vdc
                      (NPN)                                           40
                      (PNP)                                          -40
 Collector-Base Voltage                    VCBO                                                  Vdc
                      (NPN)                                           60
                      (PNP)                                          -40
 Emitter-Base VOltage                      VEBO                                                  Vdc
                      (NPN)                                           6.0
                      (PNP)                                          -5.0
 Collector Current-Continuous                IC                                                  mAdc
                      (NPN)                                          200
                      (PNP)                                         -200




Thermal Characteristics
                 Characteristics           Symbol                  Max                     Unit
 Total Package Dissipation (1)
 TA=25 C                                     PD                    150                     mW

 Thermal Resistance, Junction to Ambient    R q JA                 833                     C/W
 Junction and Storage, Temperature         TJ,Tstg         -55 to +150                       C


Device Marking
 MBT3946DW=46




     WEITRON
http://www.weitron.com.tw
                                                                                     MBT3946DW
Off C har acter istics
 Collector-Emitter Breakdown Voltage(2)                               V(BR)CEO
                                                                                       40           -     Vdc
 (IC=1.0mAdc.IB=0) (NPN)
                                                                                       -40          -
 (IC=-1.0mAdc.IB=0) (PNP)
 Collector-Base Breakdown Voltage                                     V(BR)CBO                            Vdc
 (IC=10 

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