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mje13003b


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               WEITRON                                                                  MJE13003B
High Voltage Fast-switching
                                                                         COLLECTOR
NPN Power Transistor                                                         2.

P b Lead(Pb)-Free
                                                               3.                    1. EMITTER
                                                            BASE                     2. COLLECTOR
                                                                                     3. BASE
DESCRIPTION:
                                                                             1.
The device is manufactured using high voltage                             EMITTER                     TO-92
Multi Epitaxial Planar technology for high switching
speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA.

 The MJE13003B is designed for use in compact uorescent
 lamp application.


 FEATURE:
 * Medium Voltage Capability
 * Low Spread Of Dynamic Parameters
 * Minimum Lot-to-lot Spread For Reliable Operation
 * Very High Switching Speed


 APPLICATIONS:
 * Electronic Ballasts For Fluorescent Lighting




  ABSOLUTE MAXIMUM RATINGS
                           P a r am e t e r                   Symbol                   Value                    U ni t
      Collector-Emitter Voltage (V BE = 0 )                    V CES                     700                        V
      Collector-Emitter Voltage (I B = 0 )                     V CEO                     400                        V
      Emitter-Base Voltage (I C = 0 )                          V EBO                       9                        V
      C ol l e c t o r C u r r en t                              IC                        1                        A
      Collector Peak Current (t p < 5 m s )                     I CM                       2                        A
      Ba s e C u rr e n t                                           IB                   0.5                        A
      Base Peak Current (t p < 5 m s )                          I BM                       1                        A
      Total Dissipation at T amb = 25 o C                       P tot                      1                        W
                                                                                                                o
      Thermal Resistance Junction-ambient                      R JA                      120                        C/W
                                                                                                                    o
      O p e ra t i n g J u n c t i on T e m p er a t u re        Tj                      150                            C
                                                                                                                    o
      St o r a ge T e m p er a t u re                          T stg                 - 65 t o 1 5 0                     C




    WEITRON                                                   1/4                                             16-May-08
hpp://www.weitron.com.tw
     MJE13003B

   ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
                                Parameter                                 Symbol         Min.     Typ.      Max.    Unit
     Collector Cut-off             V CE = 700 V                              I CEV                           1      mA
     Current (V BE = -1.5V)        V CE = 700 V      T j = 125 o                                             5      mA
     Emitter Cut-off               V EB = 9 V                                I EBO                           1      mA
     Current (I C = 0)
     Collector-Emitter             I C = 1 mA                             V CEO(sus)                                 V
     Sustaining Voltage            L = 25mH                                               400
     (I B = 0)
     Collector-Emitter             I C = 0.25 A          I B = 0.05 A     V CE(sat)               0.2       0.5      V
     Saturation Voltage            I C = 0.5 A           I B = 0.125 A                            0.3        1       V
                                   I C = 0.75 A          I B = 0.25 A                             0.4       1.5      V
     Base-Emitter                  I C = 0.25 A          I B = 0.05 A     V BE(sat)                          1       V
     Saturation Voltage            I C = 0.5 A           I B = 0.125 A                                      1.2      V
     DC Current Gain               I C = 0.4 A           V CE = 5 V          h FE         10                 30
                                   I C = 0.8 A           V CE = 5 V                        5                 20
     INDUCTIVE LOAD                I C = 0.25 A         V clamp = 300 V
                                                                               tf                 0.3                



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