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mmbt3906


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                                                                                               MMBT3906
General Purpose Transistor                                                        COLLECTOR
                                                                                      3
                                                                                                                       3
PNP Silicon                                                                  1                           1
                                                                           BASE
 P b Lead(Pb)-Free                                                                                                2

                                                                                       2                 SOT-23
                                                                                    EMITTER


Maximum Ratings
                    Rating                                   Symbol                       Value                            Unit
 Collector-Emitter Voltage                                    VCEO                          -40                             Vdc
 Collector-Base Voltage                                       VCBO                          -40                             Vdc
 Emitter-Base VOltage                                         VEBO                         -5.0                             Vdc
 Collector Current-Continuous                                  IC                          -200                            mAdc


Thermal Characteristics
                 Characteristics                             Symbol                      Max                          Unit
 Total Device Dissipation FR-5 Board (1)                                                 225                           mW
 TA=25 C                                                       PD
 Derate above 25 C                                                                       1.8                          mW/ C
 Thermal Resistance, Junction to Ambient                      R JA                       556                           C/W
 Total Device Dissipation                                                                300                           mW
 Alumina Substrate, (2) TA=25 C                                PD
 Derate above 25 C                                                                       2.4                          mW/ C
 Thermal Resistance, Junction to Ambient                      R JA                       417                           C/W
 Junction and Storage, Temperature                           TJ,Tstg                -55 to +150                        C


Device Marking
 MMBT3906=2A


Electrical Characteristics              (TA=25 C Unless Otherwise noted)
                                Characteristics                               Symbol              Min        Max           Unit


Off Characteristics
 Collector-Emitter Breakdown Voltage(3) (IC=-1.0mAdc.IB=0)                   V(BR)CEO             -40         -              Vdc

 Collector-Base Breakdown Voltage (IC=-10 



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