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mmbt4401


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                                                                                           MMBT4401
Switching Transistor NPN Silicon                                              COLLECTOR
                                                                                  3
                                                                                                                  3

                                                                         1                          1
                                                                       BASE
                                                                                                            2

                                                                                  2
                                                                               EMITTER
                                                                                                        SOT-23

Maximum Ratings
                  Rating                              Symbol                          Value                       Unit
 Collector-Emitter Voltage                             VCEO                            40                          Vdc
 Collector-Base Voltage                               VCBO                             60                          Vdc
 Emitter-Base VOltage                                 VEBO                             6.0                         Vdc
 Collector Current-Continuous                           IC                             600                        mAdc


Thermal Characteristics
               Characteristics                        Symbol                         Max                        Unit
 Total Device Dissipation FR-5 Board (1)                                             225                         mW
 TA=25 C                                                PD
 Derate above 25 C                                                                   1.8                        mW/ C
 Thermal Resistance, Junction to Ambient               R qJA                         556                         C/W
 Total Device Dissipation                                                            300                         mW
 Alumina Substrate, (2) TA=25 C                         PD
 Derate above 25 C                                                                   2.4                        mW/ C
 Thermal Resistance, Junction to Ambient               R qJA                         417                         C/W
 Junction and Storage, Temperature                    TJ,Tstg                 -55 to +150                        C

Device Marking
 MMBT4401=2X

Electrical Characteristics          (TA=25 C Unless Otherwise noted)
                            Characteristics                               Symbol              Min   Max               Unit

Off C har acter istics
 Collector-Emitter Breakdown Voltage(3) (IC=1.0mAdc.IB=0)                V(BR)CEO             40        -             Vdc

 Collector-Base Breakdown Voltage (IC=0.1mAdc, IE=0)                     V(BR)CBO             60        -             Vdc

 Emitter-Base Breakdown Voltage (IE=0.1mAdc, IC=0)                       V(BR)EBO             6.0       -             Vdc

 Base Cutoff Current (VCE=35 Vdc, VEB =0.4 Vdc)                               IBEV             -    0.1               uAdc
 Collector Cutoff Current (VCE=35Vdc, VEB=0.4Vdc)                             ICEX             -    0.1               uAdc
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.Pulse Test:Pulse Width <300 



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