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mmbt5088-89


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                                                                                                 MMBT5088
                                                                                                 MMBT5089
Low Noise NPN Transistor                                    COLLECTOR
                                                                3                                                  3
Surface Mount                                                                                         1
                                                      1
P b Lead(Pb)-Free                                   BASE                                                  2

                                                                    2                                  SOT-23
                                                                 EMITTER


Maximum Ratings
                     Rating                         Symbol                 5088LT1               5089LT1                  Unit
 Collector-Emitter Voltage                           V CE O                    30                   25                     Vdc
 Collector-B as e Voltage                           V CB O                     35                   30                     Vdc
 E m itter-B as e Voltage                           VE B O                                 4.5                             Vdc
 Collector Current-Continuous                          IC                                  50                             m Adc


Thermal Characteristics
                 Characteristics                    Symbol                          Max                                 Unit
 Total Device Dis s ipation FR -5 B oard (1 )                                                                           mW
 T A=2 5 C                                            PD                            225
 Derate above 2 5 C                                                                 1.8                                m W/ C
 Ther m al Res is tance, J unction to Am bient       R JA                           556                                  C/ W
 Total Device Dis s ipation                                                                                             mW
 Alum ina S ubs trate, (2 ) T A=2 5 C                 PD                            300
 Derate above 2 5 C                                                                 2.4                                m W/ C
 Ther m al Res is tance, J unction to Am bient       R JA                           417                                  C/ W
 J unction and S torage, Tem perature               T J, Ts tg                 -5 5 to +1 5 0                            C


Device Marking
  MMBT5088=1Q ; MMBT5089=1R


Electrical Characteristics (TA=25



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