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                                                                                                 MMBTA44
High-Voltage NPN Transistor                                                         COLLECTOR
                                                                                        3                     SOT-23
Surface Mount                                                                  1
                                                                                                                        3
                                                                             BASE
                                                                                                          1
                                                                                         2
                                                                                                                   2
                                                                                      EMITTER




Maximum Ratings
                      Rating                                Symbol                          Value                           Unit
 C ollector-E mitter V oltage                                VCEO                            400                             Vdc
 C ollector-B as e V oltage                                  VCBO                            450                             Vdc
 E mitter-B as e V Oltage                                    VEBO                            6.0                             Vdc
 C ollector C urrent-C ontinuous                              IC                             300                            mAdc

Thermal Characteristics
                 Characteristics                            Symbol                         Max                         Unit
 Total Device Dissipation FR-5 Board (1)                                                   225                          mW
 TA=25 C                                                      PD
 Derate above 25 C                                                                         1.8                         mW/ C
 Thermal Resistance, Junction to Ambient                     R JA                          556                          C/W
 Total Device Dissipation                                                                  350                          mW
 Alumina Substrate, (2) TA=25 C                               PD
 Derate above 25 C                                                                         2.8                         mW/ C
 Thermal Resistance, Junction to Ambient                     R JA                          357                          C/W
 Junction and Storage, Temperature                          TJ,Tstg                  -55 to +150                         C

Device Marking
 MMBTA44=3D

Electrical Characteristics            (T A =25 C Unles s Otherwis e noted)
                              Characteristics                                   Symbol              Min       Max            Unit
Off Characteristics
 Collector-Emitter Breakdown Voltage(3) (IC=1.0mAdc.IB=0)                      V(BR)CEO             400        -             Vdc

 Collector-Base Breakdown Voltage (IC=100 uAdc, IE=0)                          V(BR)CBO             450        -             Vdc

 Emitter-Base Breakdown Voltage (IE=10 uAdc, IC=0)                             V(BR)EBO             6.0        -             Vdc

 Base Cutoff Current (VCB=400 Vdc, IE=0)                                            ICBO             -        100            nAdc
 Emitter Cutoff Current VEB=4V, IC=0                                                IEBO             -        100            nAdc
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.Pulse Test:Pulse Width 300 

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