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                                                                                                            MMBTA92
High-Voltage PNP Transistor                                                COLLECTOR
                                                                               3                                                        3
Surface Mount                                                                                                            1
                                                                     1
P b Lead(Pb)-Free                                                  BASE                                                       2

                                                                                   2                                        SOT-23
                                                                                EMITTER
Maximum Ratings
                     Rating                                        Symbol                                 Value                                Unit
 Collector-E m itter Voltage                                        V CE O                                -3 0 0                                Vdc
 Collector-B as e Voltage                                          V CB O                                 -3 0 0                                Vdc
 E m itter-B as e VOltage                                          VE B O                                 -5 . 0                                Vdc
 Collector Current-Continuous                                         IC                                  -5 0 0                               m Adc


Thermal Characteristics
                 Characteristics                                   Symbol                             Max                                    Unit
 Total Device Dis s ipation FR -5 B oard (1 )                                                         225                                    mW
 T A=2 5 C                                                           PD
 Derate above 2 5 C                                                                                   1.8                                   m W/ C
 Ther m al Res is tance, J unction to Am bient                      R JA                              556                                     C/ W
 Total Device Dis s ipation                                                                           300                                    mW
 Alum ina S ubs trate, (2 ) T A=2 5 C                                PD
 Derate above 2 5 C                                                                                   2.4                                   m W/ C
 Ther m al Res is tance, J unction to Am bient                      R JA                              417                                     C/ W
 J unction and S torage, Tem perature                              T J, Ts tg                 -5 5 to +1 5 0                                  C

Device Marking
 MMB T A92=2D

Electrical Characteristics (TA=25

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