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                                                                                                             MPSA42
NPN Silicon General Purpose Transistors
                                                                                                        TO-92


                                                                                                                   1
                                                                                                   1. EMITTER          2
                                                                                                                           3
                                                                                                   2. BASE
                                                                                                   3. COLLECTOR



 MAXIMUM RATINGS* TA=25 unless otherwise noted
        Symbol                                       Parameter                                    Value                        Units
 VCBO                Collector-Base Voltage                                                        310                           V
 VCEO                Collector-Emitter Voltage                                                     305                           V
 VEBO                Emitter-Base Voltage                                                           5                            V
 IC                  Collector Current -Continuous                                                 500                          mA
 TJ, Tstg            Junction and Storage Temperature                                             -55-150                        
 RJA                 Thermal Resistance, junction to Ambient                                       200                         /mW
 RJC                 Thermal Resistance, unction to Case                                           83.3                        /mW


 *These ratings are limiting values above which the serviceability of any semiconductor device may be
 impaired.

  ELECTRICAL CHARACTERISTICS (Tamb=25                                   unless   otherwise     specified)
              Parameter                          Symbol          Test      conditions                MIN     TYP           MAX         UNIT
  Collector-base breakdown voltage               V(BR)CBO      Ic=100uA, IE=0                        310                                V
  Collector-emitter breakdown voltage            V(BR)CEO      Ic=1mA, IB=0                          305                                V
  Emitter-base breakdown voltage                 V(BR)EBO      IE=100

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