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MPSA55
MPSA56
Driver PNP Transistors
TO-92
1. EMITTER 1
2. BASE 2
3
3. COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Symbol MPSA55 MPSA56 Unit
Collector-Emitter Voltage VCEO -60 -80 Vdc
Collector-Base Voltage VCBO -60 -80 Vdc
Emitter-Base VOltage VEBO -4.0 Vdc
Collector Current IC -500 mAdc
Total Device Dissipation TA=25 C PD 0.625 W
Junction Temperature Tj 150 C
Storage, Temperature Tstg -55 to +150 C
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0)
- Vdc
MPSA55 V(BR)CEO -60
MPSA56 -80
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0)
MPSA55 V(BR)CBO -60 - Vdc
MPSA56 -80
Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) V(BR)EBO -4.0 - Vdc
Collector Cutoff Current
(VCE= 50 Vdc, IB =0) MPSA55 ICE0 - -0.1 uAdc
(VCE= 60 Vdc, IB =0) MPSA56
Collector Cutoff Current
(VCE= -60 Vdc, I B=0) MPSA55 ICBO - -0.1 uAdc
(VCE= -80 Vdc, I B=0) MPSA56
Emitter Cutoff Current (VEB= -3.0Vd c, IC =0) IEBO - -0.1 uAdc
WEITRON
http://www.weitron.com.tw
MPSA55
MPSA56
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min TYP Max Unit
ON CHARACTERISTICS
DC Current Gain - -
hFE (1) 100 -
(IC= -100 mAdc, VCE=1.0 Vdc)
Collector-Emitter Saturation Voltage -
VCE(sat) - -0.25 Vdc
(IC= -100 mAdc, IB= -10 mAdc)
Base-Emitter Saturation Voltage -
VBE(sat) - -1.2 Vdc
(IC= -100 mAdc, IB= -10 mAdc)
Current-Gain-Bandwidth Product 100
(IC= -10 mAdc, VCE= -2.0 Vdc, f=100 MHz) fT - - MHz
f T , CURRENT-GAIN - BANDWIDTH PRODUCT(MHz)
200 100
VCE = -2.0 V TJ = 25 C
70
TJ = 25 C
50
100
C, CAPACITANCE (pF)
30
70
20
50
10 Cobo
30
7.0
20 5.0
-2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100
IC, COLLECTOR CURRENT (mA) VR , REVERSE VOL TAGE (VOLTS)
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