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MPSA94
High-Voltage PNP Transistors
TO-92
1. EMITTER 1
2. BASE 2
3
3. COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO -400 Vdc
Collector-Base Voltage VCBO -400 Vdc
Emitter-Base VOltage VEBO -5.0 Vdc
Collector Current IC -200 mAdc
Total Device Dissipation TA=25 C PD 0.625 W
Junction Temperature Tj 150 C
Storage, Temperature Tstg -55 to +150 C
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) V(BR)CEO -400 - Vdc
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) V(BR)CBO -400 - Vdc
-
Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) V(BR)EBO -5.0 Vdc
Collector Cutoff Current (VCE= -400 Vdc, IB =0) ICE0 -5.0 uAdc
-
Collector Cutoff Current (VCB= -400 Vdc, IE=0) ICBO - -0.1 uAdc
Emitter Cutoff Current (VEB= -4.0Vd c, IC =0) IEBO - -0.1 uAdc
WEITRON
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MPSA94 WE IT R ON
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Max Unit
On Characteristics
DC Current Gain
(IC= -1.0 mAdc, VCE=-10Vdc) HFE(1) 70 -
(IC= -10 mAdc, VCE= -10Vdc) HFE(2) 80 300 -
(IC= -100 mAdc, VCE= -10Vdc) HFE(3) 60 -
Collector-Emitter Saturation Voltage
(IC= -10 mAdc, IB= -1.0 mAdc) VCE(sat) - -0.2 Vdc
-
(IC= -50 mAdc, IB= -5.0 mAdc) -0.3
Base-Emitter Saturation Voltage
VBE(sat) - -0.75 Vdc
(IC= -10 mAdc, IB= -1.0 mAdc)
Current-Gain-Bandwidth Product
fT - MHz
(IC= 10 mAdc, VCE= -20 Vdc, f=30MHz) 50
WEITRON
http://www.weitron.com.tw
2N5401
MPSA94
FIG1.
FIG2.
FIG3.
WEITRON
WEITRON
http://www.weitron.com.tw
http://www.weitron.com.tw
MPSA94
TO-92 Outline Dimensions unit:mm
E
TO-92
H
Dim Min Max
C A 3.30 3.70
B 1.10 1.40
C 0.38 0.55
D 0.36 0.51
L
E 4.40 4.70
G 3.43 -
H 4.30 4.70
J
J 1.270TYP
K
K 2.44 2.64
G
L 14.10 14.50
B
A
D
WEITRON
http://www.weitron.com.tw
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