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MUN5111DW Series
6 5 4
Dual Bias Resistor Transistor 6 5
4
R1
PNP Silicon Q2 R2
1
2
3
R2 Q1
R1 SOT-363(SC-88)
1 2 3
M aximum R atings ( TA=25 C unless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO -50 Vdc
Collector-Base Voltage VCBO -50 Vdc
Collector Current-Continuous IC -100 mAdc
Thermal Characteristics
Characteristics Symbol Max Unit
Total Device Dissipation FR-5 Board
(1)TA=25 C PD 187 mW
Derate above 25 C 1.5 mW/ C
Thermal Resistance, Junction to Ambient (1) R JA 493 C/W
325
Junction and Storage, Temperature Range TJ,Tstg -55 to +150 C
1.FR-4 @ minimum pad
2.FR-4 @ 1.0 l 1.0 inch Pad
l
Device Marking and Resistor Values
Device Marking R1(K) R2(K) Device Marking R1(K) R2(K)
MUN5111 0A 10 10 MUN5131 0H 2.2 2.2
MUN5112 0B 22 22 MUN5132 0J 4.7 4.7
MUN5113 0C 47 47 MUN5133 0K 4.7 47
MUN5114 0D 10 47 MUN5134 0L 22 47
MUN5115 0E 10 MUN5135 0M 2.2 47
8 8
MUN5116 0F 4.7 MUN5136 0N 100 100
MUN5130 0G 1.0 1.0 MUN5137 0P 47 22
WE IT R O N
h tt p :// ww w . w eit r o n . c o m . tw
1/12 Rev.A 20-Jan-09
MUN5111DW Series
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics Symbol Min Typ Max Unit
Off Characteristics
Collector-Emitter Breakdown Voltage V
V(BR)CEO -50 - -
(IC=-2.0mA, IB =0)
Collector-Base Breakdown Voltage
V(BR)CBO -50 - - V
(IC=-10 uA ,IE=0)
Collector-Base Cutoff Voltage
ICBO - - -100 nA
(VCB=-50 V, IE =0)
Collector-Emitter Cutoff Current ICEO - - -500 nA
(ICE=-50V, IB =0)
Emitter-Base Cutoff Current MUN5111DW - - -0.5
IEBO mA
(VEB=-6.0V, IC =0) MUN5112DW - - -0.2
MUN5113DW - - -0.1
MUN5114DW - - -0.2
MUN5115DW - - -0.9
MUN5116DW - - -1.9
MUN5130DW - - -4.3
MUN5131DW - - -2.3
MUN5132DW - - -1.5
MUN5133DW - - -0.18
MUN5134DW - - -0.13
MUN5135DW - - -0.2
MUN5136DW - - -0.05
MUN5137DW - - -0.13
On Characteristics
Collector-Emitter Saturation Voltage (IC =-10mA, IE =-0.3mA) VCE(sat) - - -0.25 Vdc
(IC =-10mA, I B =--5mA) MUN5137DW/MUN5131DW
(IC =-10mA, I B =--1mA) MUN5115DW/MUN5116DW
MUN5132DW/MUN5133DW/MUN5134DW
3. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
WEITRON 2/ 12 Rev.A 20-Jan-09
http://www.weitron.com.tw
MUN5111DW Series
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics Symbol Min Typ Max Unit
On Characteristics (3)
DC Current Gain MUN5111DW 35 60 -
h FE 100 -
(VCE=-10V, IC =-5.0mA) MUN5112DW 60
MUN5113DW 80 140 -
MUN5114DW 80 140 -
MUN5115DW 160 250 -
MUN5116DW 160 250 -
MUN5130DW 3.0 5.0 -
MUN5131DW 8.0 15 -
MUN5132DW 15 27 -
MUN5133DW 80 140 -
MUN5134DW 80 130 -
MUN5135DW 80 140 -
MUN5136DW 80 130 -
MUN5137DW 80 140 -
Output Voltage(on) MUN5111DW VOL - - -0.2
(VCC=-5.0V, VB =-2.5V, RL =1.0k ) MUN5112DW - - -0.2 Vdc
MUN5113DW - - -0.2
MUN5114DW - - -0.2
MUN5115DW - - -0.2
MUN5116DW - - -0.2
MUN5130DW - - -0.2
MUN5131DW - - -0.2
MUN5132DW - - -0.2
MUN5133DW - - -0.2
MUN5134DW - - -0.2
(VCC =-5.0V, VB =-3.5V, R L =1.0k ) MUN5135DW - - -0.2
(VCC=-5.0V, V B=-5.5V, R L=1.0k ) MUN5136DW - - -0.2
(VCC=-5.0V, VB =-4.0V, R L =1.0k ) MUN5137DW - - -0.2
Output Voltage(off ) (VCC =-5.0V, VB =-0.5V, R L =1.0k ) VOH -4.9 - - Vdc
(VCC =-5.0V, VB =-0.05V, RL =1.0k ) MUN5130DW
(VCC =-5.0V, VB =-0.25V, RL =1.0k ) MUN5115DW
MUN5116DW
MUN5131DW
MUN5133DW
3. Pulse Test: Pulse Width 300 us, Duty Cycle 2.0%
V
V
WEITRON 3/12 Rev.A 20-Jan-09
http://www.weitron.com.tw
MUN5111DW Series
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics Symbol Min Typ Max Unit
On Characteristics
Input Resistor MUN5111DW R1 7.0 10 13 k
MUN5112DW 15.4 22 28.6
MUN5113DW 32.9 47 61.1
MUN5114DW 7.0 10 13
MUN5115DW 7.0 10 13
MUN5116DW 3.3 4.7 6.1
MUN5130DW 0.7 1.0 1.3
MUN5131DW 1.5 2.2 2.9
MUN5132DW 3.3 4.7 6.1
MUN5133DW 3.3 4.7 6.1
MUN5134DW 15.4 22 28.6
MUN5135DW 1.54 2.2 2.86
MUN5136DW 70 100 130
MUN5137DW 32.9 47 61.1
Resistor Ratio MUN5111DW/MUN5112DW R1/R2
MUN5113DW/MUN5136DW 0.8 1.0 1.2
MUN5114DW 0.17 0.21 0.25
MUN5115DW/MUN5116DW - - -
MUN5130DW/MUN5131DW/MUN5132DW 0.8 1.0 1.2
MUN5133DW 0.055 0.1 0.185
MUN5134DW 0.38 0.47 0.56
MUN5135DW 0.038 0.047 0.056
MUN5137DW 1.7 2.1 2.6
4. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0 %
MUN5111DW1T1 Series
ALL MUN5111DW1T1 SERIES DEVICES
300
PD , P OWE R DIS S IPAT ION (mW)
250
200
150
100
50 R J A = 490 C /W
0
- 50 0 50 100 150
T A , AMB IE NT T E MP E R AT UR E (5C )
FIG.1 Derating Curve - ALL DEVICES
WEITRON 4/12 Rev.A 20-Jan-09
http://www.weitron.com.tw
MUN5111DW Series
MUN5111DW Series
TYPICAL ELECTRICAL CHARACTERISTICS- MUN5111DW
1000
1
VCE = 10 V
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
IC/IB = 10
TA = 75 C
TA = -25 C
25 C
0.1 100
-25 C
25 C
75 C
0.01 10
0 20 40 1 10 100
50
IC, COLLECTOR CURRENT (mA) IC , COLLECTOR CURRENT (mA)
FIG.2 V CE(sat) versus I C FIG.3 DC Current Gain
4 100
75 C 25 C
f = 1 MHz
lE = 0 V TA = -25 C
IC , COLLECTOR CURRENT (mA)
TA = 25 C 10
3
Cob , CAPACITANCE (pF)
1
2
0.1
1
0.01 VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
VR , REVERSE BIAS VOLTAGE (VOLTS) Vin , INPUT VOLTAGE (VOLTS)
FIG.4 Output Capacitance FIG.5 Output Current versus Input Voltage
100
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
TA = -25 C
10
25 C
75 C
1
0.1
0 10 20 30 40 50
IC , COLLECTOR CURRENT (mA)
FIG.6 Input Voltage versus Output Current
WEITRON 5/12 Rev.A 20-Jan-09
http://www.weitron.com.tw
MUN5111DW Series
MUN5111DW Sewries
TYPICAL ELECTRICAL CHARACTERISTICS-MUN5112DW
10 1000
CE(sat) , COLLECTOR VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
IC/IB = 10 VCE = 10 V
1 TA = 75 C
25 C
25 C
TA = -25 C -25 C
100
75 C
0.1
V
0.01 10
0 20 40 50 1 10 100
IC , COLLECTOR CURRENT (mA) IC , COLLECTOR CURRENT (mA)
FIG.7 VCE(sat) versus I C FIG.8 DC Current Gain
4 100
75 C 25 C
f = 1 MHz
TA = -25 C
IC , COLLECTOR CURRENT (mA)
lE = 0 V
10
3 TA = 25 C
Cob , CAPACITANCE (pF)
1
2
0.1
1
0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
VR , REVERSE BIAS VOLTAGE (VOLTS) Vin , INPUT VOLTAGE (VOLTS)
FIG.9 Output Capacitance FIG.10 Output Current versus Input Voltage
100
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
TA = -25 C
10 25 C
75 C
1
0.1
0 10 20 30 40 50
IC , COLLECTOR CURRENT (mA)
FIG.11 Input Voltage versus Output Current
WEITRON 6/12 Rev.A 20-Jan-09
http://www.weitron.com.tw
MUN5111DW Series
MUN5111DW Series
TYPICAL ELECTRICAL CHARACTERISTICS-MUN5112DW
1 1000
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
IC/IB = 10 VCE = 10 V
TA = 75 C
TA = -25 C 25 C 25 C
75 C -25 C
0.1 100
0.01 10
0 10 20 30 40 1 10 100
IC , COLLECTOR CURRENT (mA) IC , COLLECTOR CURRENT (mA)
FIG.12 VCE(sat) versus I C FIG.13 DC Current Gain
1 100
f = 1 MHz TA = 75 C 25 C
lE = 0 V
0.8 TA = 25 C 10 -25 C
IC , COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
0.6 1
0.4 0.1
0.2 0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 41 5 6 7 8 9 10
VR , REVERSE BIAS VOLTAGE(VOLTS) Vin , INPUT VOLTAGE (VOLTS)
FIG.14 Output Capacitance FIG.15 Output Current versus Input Voltage
100
VO = 0.2 V
TA = -25 C
V in , INPUT VOLTAGE (VOLTS)
25 C
10 75 C
1
0.1
0 10 20 30 40 50
IC , COLLECTOR CURRENT (mA)
FIG.16 Input Voltage versus Output Current
WEITRON
http://www.weitron.com.tw 7/12 Rev.A 20-Jan-09
MUN5111DW Series
MUN5111DW Series
TYPICAL ELECTRICAL CHARACTERISTICS-MUN5114DW
1 180
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
TA = 75 C
IC/IB = 10 160 VCE = 10 V
TA = -25 C 25 C
140
25 C
0.1 120 -25 C
75 C
100
80
0.01 60
40
20
0.001 0
0 20 40 60 80 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100
IC , COLLECTOR CURRENT (mA) IC , COLLECTOR CURRENT (mA)
FIG.17 VCE(sat) versus IC FIG.18 DC Current Gain
4.5 100
4 f = 1 MHz TA = 75 C 25 C
lE = 0 V
3.5
IC , COLLECTOR CURRENT (mA)
TA = 25 C
Cob , CAPACITANCE (pF)
3 -25 C
2.5
10
2
1.5
1
VO = 5 V
0.5
0 1
0 2 4 6 8 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10
VR , REVERSE BIAS VOLTAGE (VOLTS) Vin , INPUT VOLTAGE (VOLTS)
FIG.19 Output Capacitance FIG.20 Output Current versus Input Voltage
10
VO = 0.2 V 25 C
V in , INPUT VOLTAGE (VOLTS)
TA = -25 C
75 C
1
0.1
0 10 20 30 40 50
IC , COLLECTOR CURRENT (mA)
FIG.21 Input Voltage versus Output Current
WEITRON
http://www.weitron.com.tw 8/12 Rev.A 20-Jan-09
MUN5111DW Series
MUN5111DW Series
TYPICAL ELECTRICAL CHARACTERISTICS-MUN5115DW
h FE , DC CURRENT GAIN (NORMALIZED)
1000
100
1 10 100
I C , COLLECTOR CURRENT (mA)
Figure 22. DC Current Gain
TYPICAL ELECTRICAL CHARACTERISTICS-MUN5116DW
1000
h FE , DC CURRENT GAIN (NORMALIZED)
100
1 10 100
I C , COLLECTOR CURRENT (mA)
Figure 23. DC Current Gain
WEITRON 9/12 Rev.A 20-Jan-09
http://www.weitron.com.tw
MUN5111DW Series
MUN5111DW Series
TYPICAL ELECTRICAL CHARACTERISTICS-MUN5136DW
1 1000
V C E (s at) , C OLLE C TOR V OLTAG E (V OLT S )
hF E , DC C UR R E NT G AIN (NOR MALIZE D)
75 C
100 T A = -25 C
25 C
0.1
75 C
25 C
-25 C 10
I C /I B = 10 V C E = 10 V
0.01 1
0 1 2 3 4 5 6 7 1 10 100
I C , C OLLE C TOR C UR R E NT (mA) I C , C OLLE C TOR C UR R E NT (mA)
FIG.62 VCE(sat) versus IC FIG.63 DC Current Gain
1.2 100
I C , C OLLE C TOR C UR R E NT (mA)
f = 1 MHz
1.0 25 C 75 C
IE = 0 V
C ob , C APAC ITANC E (pF )
T A = 25 C
0.8 10
T A = -25 C
0.6
0.4 1
0.2 VO = 5 V
V =5V
0 0.1
0 10 20 30 40 50 60 0 1 2 3 4 5 6 7 8 9 10
V R , R E V E R S E B IAS V OLTAG E (V OLT S ) V in , INP UT V OLTAG E (V OLT S )
FIG.64 Output Capacitance FIG.65 Output Current versus Input Voltage
100
V in , INP UT V OLTAG E (V OLT S )
25 C T A = -25 C
10
75 C V O = 0.2 V
1
0 2 4 6 8 10 12 14 16 18 20
I C , C OLLE C TOR C UR R E NT (mA)
FIG.66 Input Voltage versus Output Current
WEITRON
http://www.weitron.com.tw 10/12 Rev.A 20-Jan-09
MUN5111DW Series
MUN5111DW Series
TYPICAL ELECTRICAL CHARACTERISTICS-MUN5137DW
1 1000
V C E (s at) , C OLLE C TOR V OLTAG E (V OLT S )
hF E , DC C UR R E NT G AIN (NOR MALIZE D)
75 C
T A = -25 C
75 C T A = -25 C
0.1 100
25 C
25 C
V C E = 10 V
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