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                                                                                      S8050

NPN General Purpose Transistors
                                                                           TO-92


                                                                    1. EMITTER          1
                                                                    2. BASE                 2
                                                                                                3
                                                                    3. COLLECTOR



ABSOLUTE MAXIMUM RATINGS (Ta=25 C)

                  Rating                              Symbol              Value                     Unit
 Collector-Emitter Voltage                             VCEO                25                        Vdc
 Collector-Base Voltage                               VCBO                40                         Vdc
 Emitter-Base VOltage                                 VEBO                5.0                        Vdc
 Collector Current                                      IC                500                       mAdc
 Total Device Dissipation TA=25 C                      PD                0.625                       W
 Junction Temperature                                  Tj                 150                        C
 Storage, Temperature                                 Tstg              -55 to +150                  C




ELECTRICAL CHARACTERISTICS

                             Characteristics                   Symbol        Min        Max         Unit
 Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0)      V(BR)CEO      25             -        Vdc

 Collector-Base Breakdown Voltage (IC= 100 

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