Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors WingShing 2sd1403
<< Back | HomeMost service manuals and schematics are PDF files, so You will need Adobre Acrobat Reader to view : Acrobat Download Some of the files are DjVu format. Readers and resources available here : DjVu Resources
For the compressed files, most common are zip and rar. Please, extract files with Your favorite compression software ( WinZip, WinRAR ... ) before viewing. If a document has multiple parts, You should download all, before extracting.
Good luck. Repair on Your own risk. Make sure You know what You are doing.
Image preview - the first page of the document
>> Download 2sd1403 documenatation <<
Text preview - extract from the document
2SD1403 Silicon Diffused Power Transistor
GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
plastic envelope with integrated efficiency diode,prim-
arily for use in horizontal deflection circuites of colour
television receivers
QUICK REFERENCE DATA MT-100
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 1500 V
VCEO Collector-emitter voltage (open base) - 600 V
IC Collector current (DC) - 6 A
ICM Collector current peak value - 12 A
Ptot Total power dissipation Tmb 25 - 120 W
VCEsat Collector-emitter saturation voltage IC =4.0A; IB = 1.0A - 5.0 V
Icsat Collector saturation current f = 16KHz - - A
VF Diode forward voltage IF = 5.0A 1.6 2.0 V
tf Fall time ICsat = 5.0A; f = 16KHz 0.4 - s
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 1500 V
VCEO Collector-emitter voltage (open base) - 600 V
IC Collector current (DC) - 6 A
ICM Collector current peak value - 12 A
IB Base current (DC) - - A
IBM Base current peak value - - A
Ptot Total power dissipation Tmb 25 - 120 W
Tstg Storage temperature -55 150
Tj Junction temperature - 150
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
ICE Collector cut-off current VBE = 0V; VCE = VCESMmax - 1.0 mA
ICES VBE = 0V; VCE = VCESMmax - 2.0 mA
Tj = 125
VCEOsust Collector-emitter sustaining voltage IB = 0A; IC = 100mA - V
L = 25mH
VCEsat Collector-emitter saturation voltages IC = 4.0A; IB = 1.0A - 5.0 V
VBEsat Base-emitter satuation voltage IC = 4.0A; IB = 1.0A - 1.1 V
hFE DC current gain IC = 1.0A; VCE = 5V 8
VF Diode forward voltage IF = 5.0A 1.6 2.0 V
fT Transition frequency at f = 5MHz IC = 0.1A; VCE = 10V 2 - MHz
Cc Collector capacitance at f = 1MHz VCB = 10V 100 - pF
ts Switching times(16KHz line deflecton circuit) ICsat = 5.0A; Lc=1mH; Cfb = 4nF - - s
tf Turn-off storage time Turn-off fall time IB(end) =1.0A; IC = 5.0A ; VCC = 105V 0.4 1.0 s
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: [email protected]
◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo