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2sd1650


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2SD1650                                              SILICON DIFFUSED POWER TRANSISTOR
  GENERAL DESCRIPTION
   Highvoltage,high-speed switching npn transistors in
  a plastic envelope with integrated efficiency diode,
 primarily for use in horizontal deflection circuites of
 colour television receivers

  QUICK REFERENCE DATA                                                                       TO-3PML
  SYMBOL         PARAMETER                                         CONDITIONS                          MIN   MAX    UNIT
  VCESM          Collector-emitter voltage peak value              VBE = 0V                             -    1500    V
  VCEO           Collector-emitter voltage (open base)                                                  -    600     V
  IC             Collector current (DC)                                                                 -     3.5    A
  ICM            Collector current peak value                                                           -     7.0    A
  Ptot           Total power dissipation                           Tmb 25                               -     50     W
  VCEsat         Collector-emitter saturation voltage              IC = 2.0A; IB = 0.4A                 -     1.5    V
  Icsat          Collector saturation current                      f = 16KHz                                   -     A
  VF             Diode forward voltage                             IF = 2.0A                                  2.0    V
  tf             Fall time                                         IC=2A,IB1=-IB2=0.4A,VCC=140V               1.0     s



  LIMITING VALUES
  SYMBOL          PARAMETER                                        CONDITIONS                          MIN   MAX    UNIT
  VCESM           Collector-emitter voltage peak value             VBE = 0V                             -    1500    V
  VCEO            Collector-emitter voltage (open base)                                                 -    600     V
  IC              Collector current (DC)                                                                -     3.5    A
  ICM             Collector current peak value                                                          -     7.0    A
  IB              Base current (DC)                                                                     -     1.5    A
  IBM             Base current peak value                                                               -      3     A
  Ptot            Total power dissipation                          Tmb 25                               -     50     W
  Tstg            Storage temperature                                                                  -55   150
  Tj              Junction temperature                                                                  -    150



 ELECTRICAL CHARACTERISTICS
  SYMBOL         PARAMETER                                         CONDITIONS                          MIN   MAX    UNIT
  ICE            Collector cut-off current                         VBE = 0V; VCE = VCESMmax             -     0.5    mA
  ICES                                                             VBE = 0V; VCE = VCESMmax             -     1.0    mA
                                                                   Tj = 125
  VCEOsust       Collector-emitter sustaining voltage              IB = 0A; IC = 100mA                  -            V
                                                                   L = 25mH
  VCEsat         Collector-emitter saturation voltages             IC = 2.0A; IB = 0.4A                 -    1.5     V
  VBEsat         Base-emitter satuation voltage                    IC = 2.0A; IB = 0.4A                 -    2.0     V
  hFE            DC current gain                                   IC = 1A; VCE = 5V                    8    30
  VF             Diode forward voltage                             IF = 2.0A                                 2.0     V
  fT             Transition frequency at f = 1MHz                  IC = 0.1A; VCE = 10V                 3           MHz
  Cc             Collector capacitance at f = 1MHz                 VCB = 10V                                 100     pF
  ts             Switching times(16KHz line deflecton circuit)     IC=2A,IB1=-IB2=0.4A,VCC=140V              4.5       s
  tf             Turn-off storage time Turn-off fall time          IC=2A,IB1=-IB2=0.4A,VCC=140V              1.0       s


Wing Shing Computer Components Co., (H.K.)Ltd.       Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com                   E-mail: [email protected]



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