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2sd1710


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2SD1710                                                                 Silicon Diffused Power Transistor
 GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
plastic package,pimarily for use in horizontal deflection
circuites of colour television receivers


 QUICK REFERENCE DATA                                                                           TO-3PML
 SYMBOL          PARAMETER                                         CONDITIONS                               TYP   MAX    UNIT
 VCESM           Collector-emitter voltage peak value              VBE = 0V                                  -    1500    V
 VCEO            Collector-emitter voltage (open base)                                                       -    600     V
 IC              Collector current (DC)                                                                      -      5     A
 ICM             Collector current peak value                                                                -     10     A
 Ptot            Total power dissipation                           Tmb 25                                    -     50     W
 VCEsat          Collector-emitter saturation voltage              IC = 4.0A; IB = 1.0A                      -     5.0    V
 Icsat           Collector saturation current                      f = 16KHz                                 -      -     A
 VF              Diode forward voltage                             IF = 4.5A                                1.6    2.0    V
 tf              Fall time                                         ICsat = 4.5A; f = 16KHz                  0.5    1.0     s



 LIMITING VALUES
 SYMBOL          PARAMETER                                          CONDITIONS                              MIN   MAX    UNIT
 VCESM           Collector-emitter voltage peak value               VBE = 0V                                 -    1500    V
 VCEO            Collector-emitter voltage (open base)                                                       -    600     V
 IC              Collector current (DC)                                                                      -      5     A
 ICM             Collector current peak value                                                                -     10     A
 IB              Base current (DC)                                                                           -      -     A
 IBM             Base current peak value                                                                     -      -     A
 Ptot            Total power dissipation                            Tmb 25                                   -     50     W
 Tstg            Storage temperature                                                                        -55   150
 Tj              Junction temperature                                                                        -    150



 ELECTRICAL CHARACTERISTICS
 SYMBOL          PARAMETER                                         CONDITIONS                               TYP   MAX    UNIT
 ICE             Collector cut-off current                         VBE = 0V; VCE = VCESMmax                  -     1.0    mA
 ICES                                                              VBE = 0V; VCE = VCESMmax                  -     2.0    mA
                                                                   Tj = 125
 VCEOsust        Collector-emitter sustaining voltage              IB = 0A; IC = 100mA                       -            V
                                                                   L = 25mH
 VCEsat          Collector-emitter saturation voltages             IC = 4.0A; IB = 1.0A                      -    5.0     V
 VBEsat          Base-emitter satuation voltage                    IC = 4.0A; IB = 1.0A                      -    1.5     V
 hFE             DC current gain                                   IC = 0.5A; VCE = 5V                       8
 VF              Diode forward voltage                                                                       -     -      V
 fT              Transition frequency at f = 5MHz                  IC = 0.1A; VCE = 5V                       2     -     MHz
 Cc              Collector capacitance at f = 1MHz                 VCB = 10V                                80     -      pF
 ts              Switching times(16KHz line deflecton circuit)     ICsat = 4.5A; Lc=1mH; Cfb = 4nF           -     -        s
 tf              Turn-off storage time Turn-off fall time          IB(end) = 0.8A; IC = 4.5A ; VCC = 105V   0.5   1.0       s


Wing Shing Computer Components Co., (H.K.)Ltd.        Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com                    E-mail: [email protected]



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