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2sd1910


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2SD1910                                                                Silicon Diffused Power Transistor
GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
plastic envelope with integrated efficiency diode,prim-
arily for use in horizontal deflection circuites of colour
television receivers

 QUICK REFERENCE DATA                                                                        TO-3PFM
SYMBOL          PARAMETER                                          CONDITIONS                          TYP   MAX    UNIT
VCESM           Collector-emitter voltage peak value               VBE = 0V                             -    1500    V
VCEO            Collector-emitter voltage (open base)                                                   -    600     V
IC              Collector current (DC)                                                                  -      3     A
ICM             Collector current peak value                                                            -      6     A
Ptot            Total power dissipation                            Tmb 25                               -     40     W
VCEsat          Collector-emitter saturation voltage               IC = 3.0A; IB = 0.8A                 -      5     V
Icsat           Collector saturation current                       f = 16KHz                                   -     A
VF              Diode forward voltage                              IF = 3.0A                           1.6    2.0    V
tf              Fall time                                          ICsat = 3.0A; f = 16KHz                    1.0     s



LIMITING VALUES
 SYMBOL         PARAMETER                                          CONDITIONS                          MIN   MAX    UNIT
 VCESM          Collector-emitter voltage peak value               VBE = 0V                             -    1500    V
 VCEO           Collector-emitter voltage (open base)                                                   -    600     V
 IC             Collector current (DC)                                                                  -      3     A
 ICM            Collector current peak value                                                            -      6     A
 IB             Base current (DC)                                                                       -            A
 IBM            Base current peak value                                                                 -            A
 Ptot           Total power dissipation                            Tmb 25                               -     40     W
 Tstg           Storage temperature                                                                    -65   150
 Tj             Junction temperature                                                                    -    150



ELECTRICAL CHARACTERISTICS
SYMBOL          PARAMETER                                          CONDITIONS                          TYP   MAX    UNIT
ICE             Collector cut-off current                          VBE = 0V; VCE = VCESMmax             -     1.0    mA
ICES                                                               VBE = 0V; VCE = VCESMmax             -     2.5    mA
                                                                   Tj = 125
VCEOsust        Collector-emitter sustaining voltage               IB = 0A; IC = 100mA                  -            V
                                                                   L = 25mH
VCEsat          Collector-emitter saturation voltages              IC = 3.0A; IB = 0.8A                 -     5      V
VBEsat          Base-emitter satuation voltage                     IC = 3.0A; IB = 0.8A                 -    1.5     V
hFE             DC current gain                                    IC = 300mA; VCE = 5V                 8
VF              Diode forward voltage                              IF = 3.0A                           1.6   2.0     V
fT              Transition frequency at f = 5MHz                   IC = 0.1A; VCE = 10V                 3     -     MHz
Cc              Collector capacitance at f = 1MHz                  VCB = 10V                           90     -      pF
ts              Switching times(16KHz line deflecton circuit)      IC=3A,IB(end)=0.8A,VCC=105V                -        s
tf              Turn-off storage time Turn-off fall time           IC=3A,IB(end)=0.8A,VCC=105V         0.7   1.0       s



Wing Shing Computer Components Co., (H.K.)Ltd.        Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com                    E-mail: [email protected]



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