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2sd1911


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2SD1911                                                               Silicon Diffused Power Transistor
 GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
plastic envelope with integrated efficiency diode,prim-
arily for use in horizontal deflection circuites of colour
television receivers

 QUICK REFERENCE DATA                                                                       TO-3PFM
 SYMBOL         PARAMETER                                         CONDITIONS                          TYP   MAX    UNIT
 VCESM          Collector-emitter voltage peak value              VBE = 0V                             -    1500    V
 VCEO           Collector-emitter voltage (open base)                                                  -    600     V
 IC             Collector current (DC)                                                                 -      5     A
 ICM            Collector current peak value                                                           -     10     A
 Ptot           Total power dissipation                           Tmb 25                               -     50     W
 VCEsat         Collector-emitter saturation voltage              IC = 4.0A; IB = 0.8A                 -      5     V
 Icsat          Collector saturation current                      f = 16KHz                           4.5     -     A
 VF             Diode forward voltage                             IF = 4.5A                           1.6    2.0    V
 tf             Fall time                                         ICsat = 4.0A; f = 16KHz                    1.0     s



 LIMITING VALUES
 SYMBOL          PARAMETER                                        CONDITIONS                          MIN   MAX    UNIT
 VCESM           Collector-emitter voltage peak value             VBE = 0V                             -    1500    V
 VCEO            Collector-emitter voltage (open base)                                                 -    600     V
 IC              Collector current (DC)                                                                -      5     A
 ICM             Collector current peak value                                                          -     10     A
 IB              Base current (DC)                                                                     -            A
 IBM             Base current peak value                                                               -            A
 Ptot            Total power dissipation                          Tmb 25                               -     50     W
 Tstg            Storage temperature                                                                  -65   150
 Tj              Junction temperature                                                                  -    150



ELECTRICAL CHARACTERISTICS
 SYMBOL         PARAMETER                                         CONDITIONS                          TYP   MAX    UNIT
 ICE            Collector cut-off current                         VBE = 0V; VCE = VCESMmax             -     1.0    mA
 ICES                                                             VBE = 0V; VCE = VCESMmax             -     2.5    mA
                                                                  Tj = 125
 VCEOsust       Collector-emitter sustaining voltage              IB = 0A; IC = 100mA                  -            V
                                                                  L = 25mH
 VCEsat         Collector-emitter saturation voltages             IC = 4.0A; IB = 0.8A                 -    5.0     V
 VBEsat         Base-emitter satuation voltage                    IC = 4.0A; IB = 0.8A                 -    1.5     V
 hFE            DC current gain                                   IC = 1.0A; VCE = 5V                  8
 VF             Diode forward voltage                             IF = 4.5A                           1.6   2.0     V
 fT             Transition frequency at f = 5MHz                  IC = 0.1A; VCE = 10V                 3     -     MHz
 Cc             Collector capacitance at f = 1MHz                 VCB = 10V                           110    -      pF
 ts             Switching times(16KHz line deflecton circuit)     Ic=4A,IB(end)=0.8A,VCC=105V                -        s
 tf             Turn-off storage time Turn-off fall time          Ic=4A,IB(end)=0.8A,VCC=105V         0.7   1.0       s



Wing Shing Computer Components Co., (H.K.)Ltd.       Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com                   E-mail: [email protected]



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