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2SD1265                                   NPN EPITAXIAL SILICON TRANSISTOR

POWER AMPLIFIER
VERTICAL DEFLECTION OUTPUT


                                                                                         SC-67
!                                   
     ABSOLUTE MAXIMUM RATINGS (TA=25)


              Characteristic            Symbol   Rating      Unit

Collector-Base Voltage                  VCBO        60        V
Collector-Emitter Voltage               VCEO        60        V
Emitter-Base voltage                    VEBO         5        V
Collector Current (DC)                   IC          4        A
Collector Dissipation (Tc=25)            PC         30        W
Junction Temperature                     Tj        150        
Storage Temperature                      Tstg    -50~150      




                                 
ELECTRICAL CHARACTERISTICS (TA=25)


                   Characteristic                Symbol        Test Condition      Min   Typ     Max   Unit

Collector Cutoff Current                          ICBO       VCB= 150V , IE=0                     10   

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