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2SD850 Silicon Diffused Power Transistor
GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
plastic package primarily for use in horizontal
deflection circuites of colour television receivers
TO-3
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 1500 V
VCEO Collector-emitter voltage (open base) - 600 V
IC Collector current (DC) - 3 A
ICM Collector current peak value - 6 A
Ptot Total power dissipation Tmb 25 - 40 W
VCEsat Collector-emitter saturation voltage IC = 3.0A; IB = 0.8A - 5 V
Icsat Collector saturation current f = 16KHz - A
VF Diode forward voltage V
tf Fall time ICsat = 3.0A; f = 16KHz 1.0 s
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 1500 V
VCEO Collector-emitter voltage (open base) - 600 V
IC Collector current (DC) - 3 A
ICM Collector current peak value - 6 A
IB Base current (DC) - A
IBM Base current peak value - A
Ptot Total power dissipation Tmb 25 - 40 W
Tstg Storage temperature -55 150
Tj Junction temperature - 150
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
ICE Collector cut-off current VBE = 0V; VCE = VCESMmax - 1.0 mA
ICES VBE = 0V; VCE = VCESMmax - 2.5 mA
Tj = 125
VCEOsust Collector-emitter sustaining voltage IB = 0A; IC = 100mA - V
L = 25mH
VCEsat Collector-emitter saturation voltages IC = 3.0A; IB = 0.8A - 5 V
VBEsat Base-emitter satuation voltage IC = 3.0A; IB = 0.8A - 1.5 V
hFE DC current gain IC = 0.5A; VCE = 5V 8
VF Diode forward voltage V
fT Transition frequency at f = 5MHz IC=0.1A,VCE=10V 3 - MHz
Cc Collector capacitance at f = 1MHz VCB = 10V 90 - pF
ts Switching times(16KHz line deflecton circuit) IC=3A,IB(end)=0.8A,VCC=105V - s
tf Turn-off storage time Turn-off fall time IC=3A,IB(end)=0.8A,VCC=105V 1.0 s
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: [email protected]
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