Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors WingShing 2sd862
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2SD862 Silicon Epitaxial Planar Transistor GENERAL DESCRIPTION Silicon NPN high frequency, Low Vce(sat) middle power transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA TO-126 SYMBOL PARAMETER CONDITIONS TYP MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 20 V VCEO Collector-emitter voltage (open base) - 20 V IC Collector current (DC) - 2 A ICM Collector current peak value - A Ptot Total power dissipation Tmb 25 - 10 W VCEsat Collector-emitter saturation voltage IC = 1.5A; IB = 0.15A - 0.5 V VF Diode forward voltage IF = 1.5A 1.5 2.0 V tf Fall time - s LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 20 V VCEO Collector-emitter voltage (open base) - 20 V VEBO Emitter-base oltage (open colloctor) 6 V IC Collector current (DC) - 2 A IB Base current (DC) - 0.5 A Ptot Total power dissipation Tmb 25 - 10 W Tstg Storage temperature -55 150 Tj Junction temperature - 150 ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS TYP MAX UNIT ICBO Collector-base cut-off current VCB=20V - 0.1 mA IEBO Emitter-base cut-off current VEB=5V - 0.2 mA V(BR)CEO Collector-emitter breakdown voltage IC=1mA 20 V VCEsat Collector-emitter saturation voltages IC = 1.5A; IB = 0.15A - 0.5 V hFE DC current gain IC = 100mA; VCE = 2V 60 400 fT Transition frequency at f = 5MHz IC = 0.5A; VCE = 12V 80 - MHz Cc Collector capacitance at f = 1MHz VCB = 10V 75 - pF ton On times us ts Tum-off storage time us tf Fall time us Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153 Homepage: http://www.wingshing.com E-mail: [email protected]
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