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           Transys
            Electronics
             L I M I T E D




                           SOT-89 Plastic-Encapsulated Transistors


   2SA1664              TRANSISTOR (PNP)                                  SOT-89

FEATURES                                                                  1. BASE
  Power dissipation
                                                                          2. COLLECTOR        1
             PCM     : 0.5      W (Tamb=25)                                                       2
  Collector current                                                       3. EMITTER                   3
           ICM      : -0.8  A
  Collector-base voltage
           V(BR)CBO : -35   V
  Operating and storage junction temperature range

              TJ, Tstg: -55 to +150




ELECTRICAL CHARACTERISTICS (Tamb=25                   unless otherwise specified)

           Parameter                    Symbol         Test   conditions               MIN            TYP   MAX    UNIT

 Collector-base breakdown voltage       V(BR)CBO         Ic=-1mA, IE=0                 -35                          V

 Collector-emitter breakdown voltage    V(BR)CEO         Ic=-10mA, IB=0                -30                          V

 Emitter-base breakdown voltage         V(BR)EBO         IE=-1mA, IC=0                 -5                           V

 Collector cut-off current               ICBO            VCB=-35V, IE=0                                     -0.1   

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